PD - 97500A IRF6201PbF HEXFET Power MOSFET V 20 V DS R DS(on) max 2.45 m ( V = 4.5V) GS R DS(on) max 2.75 m ( V = 2.5V) GS Q 130 nC g (typical) SO-8 I D 27 A ( T = 25C) A Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switch Features and Benefits Features Benefits Low R ( 2.45m Vgs = 4.5V) Lower conduction losses DSon results in Industry-standard SO-8 package Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen Environmentally Friendly Orderable part number Package Type Standard Pack Note Form Quantity IRF6201PbF SO8 Tube/Bulk 95 IRF6201TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 20 DS V 12 V Gate-to-Source Voltage GS Continuous Drain Current, V 4.5V 27 I T = 25C GS A D Continuous Drain Current, V 4.5V 22 A I T = 70C GS D A I Pulsed Drain Current 110 DM P T = 25C Power Dissipation 2.5 D A W 1.6 P T = 70C Power Dissipation A D 0.02 Linear Derating Factor W/C -55 to + 150 T Operating Junction and J C T Storage Temperature Range STG www.irf.com 1 11/11/2010 Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units BV V = 0V, I = 250A DSS Drain-to-Source Breakdown Voltage 20 V GS D Reference to 25C, I = 1mA V / T Breakdown Voltage Temp. Coefficient 4.6 mV/C D DSS J R V = 4.5V, I = 27A 1.90 2.45 GS D DS(on) Static Drain-to-Source On-Resistance m V = 2.5V, I = 22A 2.10 2.75 GS D V V = V , I = 100A GS(th) Gate Threshold Voltage 0.5 1.1 V DS GS D V = 16V, V = 0V I Drain-to-Source Leakage Current 1.0 DSS DS GS A = 16V, V = 0V, T = 125C 150 V DS GS J V = 12V I Gate-to-Source Forward Leakage 100 GSS GS nA V = -12V Gate-to-Source Reverse Leakage -100 GS Q V = 4.5V Total Gate Charge 130 195 GS g Q nC V = 10V Gate-to-Source Charge 16 DS gs I = 22A Q Gate-to-Drain Charge 60 D gd V = 20V, V = 4.5V t Turn-On Delay Time 29 d(on) DD GS I = 1.0A t Rise Time 100 r D ns t Turn-Off Delay Time 320 R = 6.8 d(off) G t See Figs. 10a & 10b Fall Time 265 f C V = 0V Input Capacitance 8555 GS iss C pF V = 16V Output Capacitance 1735 DS oss C Reverse Transfer Capacitance 1290 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the A G I integral reverse SM Pulsed Source Current 110 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.2 V T = 25C, I = 2.5A, V = 0V SD J S GS t Reverse Recovery Time 82 120 ns T = 25C, I = 2.5A, V = 16V rr DD J F Q di/dt = 100/s Reverse Recovery Charge 180 270 nC rr Thermal Resistance Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 50 JA Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle When mounted on 1 inch square copper board. 2