SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications V R (max) I DSS DS(on) D Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m V = -10V -27A GS Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design (See App. Note AN1001) OSS S Fully Characterized Avalanche Voltage and Current G Lead-Free D2 Pak IRF6218SPbF G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 IRF6218SPbF IRF6218SPbF D2-Pak Tape and Reel Left 800 IRF6218STRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units V Drain-to-Source Voltage -150 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V - 27 D C GS I T = 100C Continuous Drain Current, V 10V -19 D C GS A I Pulsed Drain Current - 110 DM P T = 25C Maximum Power Dissipation 250 W D C Linear Derating Factor 1.6 W/C dv/dt Peak Diode Recovery dv/dt 8.2 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.61 R JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA Notes through are on page 2 1 2016-5-26 IRF6218SPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.17 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 120 150 mV = -10V, I = -16A DS(on) GS D V Gate Threshold Voltage -3.0 - 5.0 V V = V , I = -250A GS(th) DS GS D -25 V = -120V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V,V = 0V,T = 150C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic T = 25C (unless otherwise specified) J gfs Forward Trans conductance 11 S V = -50V, I = -16A DS D Q Total Gate Charge 71 110 I = -16A g D Q Gate-to-Source Charge 21 nC V = -120V gs DS Q Gate-to-Drain (Miller) Charge 32 V = -10V GS gd t Turn-On Delay Time 21 V = -75V d(on) DD t Rise Time 70 I = -16A r D ns t Turn-Off Delay Time 35 R = 3.9 d(off) G t Fall Time 30 V = -10V GS f C Input Capacitance 2210 V = 0V iss GS C Output Capacitance 370 V = -25V oss DS C Reverse Transfer Capacitance 89 = 1.0MHz rss pF C Output Capacitance 2220 V = 0V, V = -1.0V, = 1.0MHz oss GS DS C Output Capacitance 170 V = 0V, V = -120V, = 1.0MHz oss GS DS C Effective Output Capacitance 340 V = 0V, V = 0V to -120V oss eff. GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 210 mJ AS I Avalanche Current -16 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -27 S (Body Diode) showing the A Pulsed Source Current integral reverse I -110 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -16A,V = 0V SD J S GS t Reverse Recovery Time 150 ns T = 25C ,I = -16A, V = -25V rr J F DD Q Reverse Recovery Charge 860 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. starting T = 25C, L = 1.6mH, R = 25 , I = -17A J G AS I -17A, di/dt -520A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. R is measured at T of approximately 90C. J When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 2016-5-26