X-On Electronics has gained recognition as a prominent supplier of IRF620STRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF620STRLPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF620STRLPBF Vishay

IRF620STRLPBF electronic component of Vishay
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See Product Specifications
Part No.IRF620STRLPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 200V 5.2 Amp
Datasheet: IRF620STRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8357 ea
Line Total: USD 1.84 
Availability - 5
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
582
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 17
Multiples : 1
17 : USD 1.963
40 : USD 1.846
125 : USD 1.755
400 : USD 1.651

5
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 1.8357
10 : USD 1.5965
30 : USD 1.4467
100 : USD 1.2931
500 : USD 1.2243
800 : USD 1.1941

   
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We are delighted to provide the IRF620STRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF620STRLPBF and other electronic components in the MOSFETs category and beyond.

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IRF620S, SiHF620S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G Fast switching Available Simple drive requirements Ease of paralleling D G Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 200 DS DESCRIPTION R ( )V = 10 V 0.80 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 14 designer with the best combination of fast switching, g ruggedized device design, low on-resistance and Q (nC) 3.0 gs cost-effectiveness. Q (nC) 7.9 gd 2 The D PAK (TO-263) is a surface-mount power package Configuration Single capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHF620S-GE3 SiHF620STRL-GE3 SiHF620STRR-GE3 a a Lead (Pb)-free IRF620SPbF IRF620STRLPbF IRF620STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 5.2 C Continuous drain current V at 10 V I GS D T = 100 C 3.3 A C a Pulsed drain current I 18 DM Linear derating factor 0.40 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 110 mJ AS a Avalanche current I 5.2 A AR a Repetitive avalanche energy E 5.0 mJ AR Maximum power dissipation T = 25 C 50 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.0 A c Peak diode recovery dv/dt dv/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 6.1 mH, R = 25 , I = 5.2 A (see fig. 12) DD J g AS c. I 5.2 A, di/dt 95 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. E, 07-Sep-2020 Document Number: 91028 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF620S, SiHF620S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.29 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.1 A - - 0.80 DS(on) GS D b Forward transconductance g V = 50 V, I = 3.1 A 1.5 - - S fs DS D Dynamic Input capacitance C - 260 - iss V = 0 V, GS Output capacitance C -V = 25 V, 100- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -30- rss Total gate charge Q -- 14 g I = 4.8 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.9 gd Turn-on delay time t -7.2 - d(on) Rise time t -22 - r V = 100 V, I = 4.8 A, DD D ns b R = 18 , R = 20 , see fig. 10 Turn-off delay time t -1g D 9- d(off) Fall time t -13- f Gate input resistance R f = 1 MHz, open drain 0.8 - 3.5 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of die G Internal source inductance L -7.5 - contact S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 5.2 S showing the A G integral reverse a Pulsed diode forward current I -- 18 S SM p - n junction diode b Body diode voltage V T = 25 C, I = 5.2 A, V = 0 V -- 1.8 V SD J S GS Body diode reverse recovery time t - 150 300 ns rr b T = 25 C, I = 4.8 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -0.91 1.8 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. E, 07-Sep-2020 Document Number: 91028 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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