PD - 95469B IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET V R max (m I DSS DS(on) D Surface Mount -20V 90 V = -4.5V -2.9A GS Available in Tape & Reel 135 V = -2.5V -2.3A GS Low Gate Charge Lead-Free Halogen-Free Description These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. TSOP-6 This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and R DS(on) reduction enables an increase in current-handling capability. Parameter Max. Units V Drain- Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -2.9 D A GS I T = 70C Continuous Drain Current, V -4.5V -2.3 A D A GS I Pulsed Drain Current -11 DM P T = 25C Power Dissipation 0.96 D A P T = 70C Power Dissipation 0.62 D A Linear Derating Factor 0.008 mW/C V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 130 C/W JA www.irf.com 1 04/20/10 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.011 V/C Reference to 25C, I = -1mA (BR)DSS J D 60 90 V = -4.5V, I = -2.9 GS D R Static Drain-to-Source On-Resistance DS(on) m 87 135 V = -2.5V, I = -2.3A GS D V Gate Threshold Voltage -0.45 -1.2 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 5.4 S V = -10V, I = -2.9A fs DS D -1.0 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -16V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 6.4 9.6 I = -2.9A g D Q Gate-to-Source Charge 1.2 1.8 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 1.7 2.6 V = -4.5V gd GS t Turn-On Delay Time 8.2 V = -10V d(on) DD t Rise Time 14 I = -1.0A r D t Turn-Off Delay Time 62 R = 6.0 d(off) G t Fall Time 53 V = -4.5V f GS C Input Capacitance 650 V = 0V iss GS C Output Capacitance 110 pF V = -16V oss DS C Reverse Transfer Capacitance 86 = 1kHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.0 (Body Diode) showing the I Pulsed Source Current integral reverse G SM 11 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.0A, V = 0V SD J S GS t Reverse Recovery Time 110 170 ns T = 25C, I = -1.0A rr J F Q Reverse Recovery Charge 130 200 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on 1 in square Cu board max. junction temperature. Pulse width 400s duty cycle 2 www.irf.com