IPB90R340C3 CoolMOS Power Transistor Product Summary Features V T =25C 900 V DS J Lowest figure-of-merit R x Q ON g R T =25C 0.34 W DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability 1) Qualified according to JEDEC for industrial applications PG-TO263 Pb-free lead plating RoHS compliant Ultra low gate charge CoolMOS 900V is designed for: Quasi Resonant Flyback / Forward topologies SMPS PC Silverbox Lighting Solar TTyyppee PPaacckkaaggee MMaarrkkiningg IPIPBB9900R3R34400C3C3 PPGG--TTOO226633 99R3R34400CC Maximum ratings, at T =25 C, unless otherwise specified J Value Parameter Symbol Conditions Unit I T =25C 15 Continuous drain current A D C T =100C 9.5 C 2) I T =25C 34 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =3.1A, V =50V 678 mJ AS D DD 2),3) E I =3.1A, V =50V 1 Avalanche energy, repetitive t AR D DD AR 2),3) I 3.1 Avalanche current, repetitive t A AR AR V =0...400V 50 MOSFET dv /dt ruggedness dv /dt V/ns DS V 20 Gate source voltage static V GS 30 AC (f>1 Hz) P T =25C 208 Power dissipation W tot C T , T -55 ... 150 Operating and storage temperature C J stg ReRevv.. 22.0.0 ppaaggee 11 22001122--0044--1166IPB90R340C3 Maximum ratings, at T =25 C, unless otherwise specified J Parameter Symbol Conditions Value Unit I 9.2 Continuous diode forward current A S T =25C C 2) I 34 Diode pulse current S,pulse 4) dv /dt 4 V/ns Reverse diode dv /dt Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 0.6 K/W thJC SMD version, device R on PCB: at minimum - - 62 thJA footprint Thermal resistance, junction - ambient SMD version, device R on PCB: at 6 cm - 35 - thJA 5) ccoooolliinngg aarreeaa Soldering temperature, only reflow soldering allowed part not qualified T reflow MSL1 - - 260 C sold for direct wave soldering but bottom side PCB wave soldering is allowed Electrical characteristics, at T =25 C, unless otherwise specified J Static characteristics Drain-source breakdown voltage V V =0V, I =250A 900 - - V (BR)DSS GS D V V =V , I =1mA Gate threshold voltage 2.5 3 3.5 GS(th) DS GS D V =900V, V =0V, DS GS I Zero gate voltage drain current - - 2 A DSS T =25C j V =900V, V =0V, DS GS - 20 - T =150C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =10V, I =9.2A, GS D R Drain-source on-state resistance - 0.28 0.34 W DS(on) T =25C j V =10V, I =9.2A, GS D - 0.76 - T =150C j Gate resistance R f =1MHz, open drain - 1.3 - W G ReRevv.. 22.0.0 ppaaggee 22 22001122--0044--1166