X-On Electronics has gained recognition as a prominent supplier of IRF7104TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7104TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7104TRPBF Infineon

Hot IRF7104TRPBF electronic component of Infineon
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See Product Specifications
Part No.IRF7104TRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 2 P Channel (Dual) 20V 2.3A 3V @ 250uA 250 mΩ @ 1A,10V SO-8_3.9mm RoHS
Datasheet: IRF7104TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
28: USD 0.2786 ea
Line Total: USD 7.8 
Availability - 853
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 28  Multiples: 1
Pack Size: 1
Availability Price Quantity
67
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7583
10 : USD 0.6244
30 : USD 0.5574
100 : USD 0.4903
500 : USD 0.4501
1000 : USD 0.429

4863
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6116
10 : USD 0.5797
100 : USD 0.4488
500 : USD 0.385
1000 : USD 0.352
2000 : USD 0.3487
4000 : USD 0.3432
8000 : USD 0.3344

853
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 28
Multiples : 1
28 : USD 0.2786
12000 : USD 0.2764

939
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 23
Multiples : 1
23 : USD 0.531
25 : USD 0.5286
100 : USD 0.4588
250 : USD 0.4542
500 : USD 0.3535

3880
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 89
Multiples : 1
89 : USD 0.4615
100 : USD 0.4322
500 : USD 0.421
2000 : USD 0.4193

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF7104TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7104TRPBF and other electronic components in the MOSFETs category and beyond.

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The Infineon IRF7104TRPBF is a dual P-Channel MOSFET with a maximum drain-source voltage of 20V, a drain current of 2.3A and a gate voltage of 3V at 250uA. It has a maximum junction temperature of 150 degrees Celsius and a threshold voltage of 250mV. It has an RDS(on) resistance of max 250mΩ at 1A and 10V and a maximum power dissipation of 2.75W. It is built in an SO-8 package with a 3.9mm lead pitch that complies with the RoHS requirements. It is designed for use in high speed switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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