IRF6645TR1PBF Infineon

DirectFET Power MOSFET RoHS Compliant, Halogen-Free Lead-Free (Qualified up to 260C Reflow) V V R DSS GS DS(on) Application Specific MOSFETs 100V max 20V max 28m 10V Ideal for High Performance Isolated Converter Primary Switch Socket Q Q V g tot gd gs(th) Optimized for Synchronous Rectification 14nC 4.8nC 4.0V Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN Description TM The IRF6645PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter Max. Units V 100 DS Drain-to-Source Voltage V V Gate-to-Source Voltage 20 GS 5.7 I T = 25C Continuous Drain Current, V 10V A GS D Continuous Drain Current, V 10V 4.5 I T = 70C A A GS D Continuous Drain Current, V 10V 25 I T = 25C GS D C I Pulsed Drain Current 45 DM 29 E Single Pulse Avalanche Energy mJ AS I 3.4 Avalanche Current A AR 12 80 I = 3.4A V = 80V I = 3.4A D DS D 10 70 VDS= 50V 8 60 T = 125C J 6 50 40 4 T = 25C J 30 2 20 0 4 6 8 10 12 14 16 0 4 8 12 16 V , Gate-to-Source Voltage (V) GS Q Total Gate Charge (nC) G Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 5.0mH, R = 25, I = 3.4A. Surface mounted on 1 in. square Cu board, steady state. J G AS Typical R (on) (m) DS V , Gate-to-Source Volt age (V) GS Electrical Characteristic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250 A Drain-to-Source Breakdown Voltage 100 V DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA DSS J D V = 10V, I = 5.7A R Static Drain-to-Source On-Resistance 28 35 m DS(on) GS D V = V , I = 50 A V Gate Threshold Voltage 3.0 4.9 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -12 mV/C GS(th) J V = 100V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 80V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 10V, I = 3.4A gfs Forward Transconductance 7.4 S DS D Q Total Gate Charge 14 20 g V = 50V Q Pre-Vth Gate-to-Source Charge 3.1 DS gs1 V = 10V Q Post-Vth Gate-to-Source Charge 0.8 nC GS gs2 I = 3.4A Q Gate-to-Drain Charge 4.8 7.2 D gd Q Gate Charge Overdrive 5.3 See Fig. 15 godr Q Switch Charge (Q + Q ) 5.6 sw gs2 gd Q V = 16V, V = 0V Output Charge 7.2 nC oss DS GS R Gate Resistance 1.0 G V = 50V, V = 10V t Turn-On Delay Time 9.2 DD GS d(on) I = 3.4A t Rise Time 5.0 D r R =6.2 t Turn-Off Delay Time 18 ns G d(off) t Fall Time 5.1 f V = 0V C Input Capacitance 890 iss GS C V = 25V Output Capacitance 180 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 40 rss C V = 0V, V = 1.0V, f=1.0MHz Output Capacitance 870 oss GS DS C Output Capacitance 100 V = 0V, V = 80V, f=1.0MHz GS DS oss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 25 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 45 integral reverse SM S (Body Diode) p-n junction diode. T = 25C, I = 3.4A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t T = 25C, I = 3.4A, V = 50V Reverse Recovery Time 31 47 ns J F DD rr Q di/dt = 100A/s Reverse Recovery Charge 40 60 nC rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.