IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface mount V (V) 200 DS Available in tape and reel R ( )V = 10 V 1.5 DS(on) GS Dynamic dV/dt rating Available Q (Max.) (nC) 8.2 g Repetitive avalanche rated Q (nC) 1.8 gs Fast switching Available Q (nC) 4.5 gd Ease of paralleling Configuration Single Simple drive requirements Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 2 2 I PAK (TO-262) D PAK (TO-263) Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G D G S D DESCRIPTION S G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and S cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package N-Channel MOSFET capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a a Lead (Pb)-free and halogen-free SiHF610S-GE3 SiHF610STRL-GE3 SiHF610STRR-GE3 SiHF610L-GE3 a a a Lead (Pb)-free IRF610SPbF IRF610STRLPbF IRF610STRRPbF IRF610LPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 3.3 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.1 A C a Pulsed Drain Current I 10 DM Linear Derating Factor 0.29 W/C e 0.025 Linear Derating Factor (PCB mount) b Single Pulse Avalanche Energy E 64 mJ AS a Repetitive Avalanche Current I 3.3 A AR a Repetitive Avalanche Energy E 3.6 mJ AR Maximum Power Dissipation T = 25 C 36 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 3.0 A c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 8.8 mH, R = 25 , I = 3.3 A (see fig. 12). DD J g AS c. I 3.3 A, dI/dt 70 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S15-1659-Rev. D, 20-Jul-15 Document Number: 91024 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 40 thJA c (PCB mount) C/W -- 62 Maximum Junction-to-Ambient R thJA Maximum Junction-to-Case (Drain) R -- 3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.30 - V/C DS J DS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.0 A -- 1.5 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.0 A 0.80 - - S fs DS D Dynamic Input Capacitance C - 140 - iss V = 0 V, GS Output Capacitance C -5V = 25 V, 3- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 8.2 g I = 3.3 A, V = 160 V D DS Gate-Source Charge Q --V = 10 V 1.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --4.5 gd Turn-On Delay Time t -8.2 - d(on) Rise Time t V = 100 V, I = 3.3 A, -17 - r DD D ns R = 24 , R = 30 g D Turn-Off Delay Time t -14- d(off) b see fig. 10 Fall Time t -8.9- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I MOSFET symbol -- 3.3 S showing the A G integral reverse a S Pulsed Diode Forward Current I -- 10 SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 3.3 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 150 310 ns rr T = 25 C, I = 3.3 A, J F b dI/dt = 100 A/s Body Diode Reverse Recovery Charge Q - 0.60 1.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 or G-10 material). S15-1659-Rev. D, 20-Jul-15 Document Number: 91024 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000