X-On Electronics has gained recognition as a prominent supplier of IRF6216 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF6216 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF6216 Infineon

IRF6216 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.IRF6216
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC
Datasheet: IRF6216 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 7.3051 ea
Line Total: USD 73.05 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 7.3051
25 : USD 4.536
100 : USD 3.5114

   
Manufacturer
Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF6216 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF6216 and other electronic components in the MOSFETs category and beyond.

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PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D Reset Switch for Active Clamp Reset -150V 0.240 V =-10V -2.2A GS DC-DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 Effective C to Simplify Design (See 6 OSS S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V -2.2 D A GS I T = 70C Continuous Drain Current, V 10V -1.9 A D A GS I Pulsed Drain Current -19 DM P T = 25C Power Dissipation 2.5 W D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 7.8 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Drain Lead 20 JL R Junction-to-Ambient 50 C/W JA Notes through are on page 8 www.irf.com 1 02/12/02IRF6216 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 VV = 0V, I = -250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient -0.17 V/C Reference to 25C, I = -1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.240 V = -10V, I = -1.3A DS(on) GS D V Gate Threshold Voltage -3.0 -5.0 V V = V , I = -250A GS(th) DS GS D -25 V = -150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS nA I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 2.7 SV = -50V, I = -1.3A fs DS D Q Total Gate Charge 33 49 I = -1.3A g D Q Gate-to-Source Charge 7.2 11 nC V = -120V gs DS Q Gate-to-Drain Mille) Charge 15 23 V = -10V, gd GS t Turn-On Delay Time 18 V = -75V d(on) DD t Rise Time 15 I = -1.3A r D ns t Turn-Off Delay Time 33 R = 6.5 d(off) G t Fall Time 26 V = -10V f GS C Input Capacitance 1280 V = 0V iss GS C Output Capacitance 220 V = -25V oss DS C Reverse Transfer Capacitance 53 pF = 1.0MHz rss C Output Capacitance 1290 V = 0V, V = -1.0V, = 1.0MHz oss GS DS C Output Capacitance 99 V = 0V, V = -120V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 220 V = 0V, V = 0V to -120V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 200 mJ AS I Avalanche Current -4.0 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -2.2 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -19 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.6 V T = 25C, I = -1.3A, V = 0V SD J S GS t Reverse Recovery Time 80 120 nS T = 25C, I = -1.3A rr J F Q Reverse RecoveryCharge 310 460 nC di/dt = -100A/s rr 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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