PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D High frequency DC-DC converters 200V 2.2 0.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free TSOP-6 Halogen-Free Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 0.6 D A GS I T = 70C Continuous Drain Current, V 10V 0.48 A D A GS I Pulsed Drain Current 4.8 DM P T = 25C Power Dissipation 2.0 W D A Linear Derating Factor 0.016 W/C V Gate-to-Source Voltage 30 V GS dv/dt Peak Diode Recovery dv/dt 9.6 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Ambient 62.5 C/W JA Notes through are on page 8 www.irf.com 1 04/20/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.2 V = 10V, I = 0.36A DS(on) GS D V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A GS(th) DS GS D 25 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 160V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 30V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -30V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 0.44 S V = 50V, I = 0.36A fs DS D Q Total Gate Charge 3.9 I = 0.36A g D Q Gate-to-Source Charge 0.8 nC V = 160V gs DS Q Gate-to-Drain Mille) Charge 2.2 V = 10V gd GS t Turn-On Delay Time 6.5 V = 100V d(on) DD t Rise Time 8.0 I = 0.36A r D ns t Turn-Off Delay Time 8.8 R = 53 d(off) G t Fall Time 19 V = 10V f GS C Input Capacitance 88 V = 0V iss GS C Output Capacitance 18 V = 25V oss DS C Reverse Transfer Capacitance 6.3 pF = 1.0MHz rss C Output Capacitance 102 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 8.4 V = 0V, V = 160V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 26 V = 0V, V = 0V to 160V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 9.9 mJ AS I Avalanche Current 0.6 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 1.8 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 4.8 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 0.36A, V = 0V SD J S GS t Reverse Recovery Time 45 ns T = 25C, I = 0.36A rr J F Q Reverse RecoveryCharge 54 nC di/dt = 100A/s rr 2 www.irf.com