X-On Electronics has gained recognition as a prominent supplier of IRL520PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRL520PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRL520PBF Vishay

Hot IRL520PBF electronic component of Vishay
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Part No.IRL520PBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 100 V 9.2A (Tc) 60W (Tc) Through Hole TO-220AB
Datasheet: IRL520PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.12 ea
Line Total: USD 1.12 
Availability - 735
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1717
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6987
10 : USD 0.6558

1067
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 50
50 : USD 0.65
200 : USD 0.65
1000 : USD 0.65
2000 : USD 0.65
6250 : USD 0.65

591
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.21
10 : USD 0.8052
100 : USD 0.7337
500 : USD 0.6743
1000 : USD 0.6336
2000 : USD 0.5951
5000 : USD 0.5753

735
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.12
10 : USD 1.0136
31 : USD 0.56
83 : USD 0.532

1717
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 12
Multiples : 1
12 : USD 0.6558

179
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 57
Multiples : 1
57 : USD 0.7183
100 : USD 0.7167

1940
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.7326

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRL520PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRL520PBF and other electronic components in the MOSFETs category and beyond.

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IRL520, SiHL520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ()V = 5.0 V 0.27 DS(on) GS RoHS* Logic-Level Gate Drive COMPLIANT Q (Max.) (nC) 12 g R Specified at V = 4 V and 5 V DS(on) GS Q (nC) 3.0 gs 175 C Operating Temperature Q (nC) 7.1 gd Fast Switching Configuration Single Ease of Paralleling D Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D S G commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRL520PbF Lead (Pb)-free SiHL520-E3 IRL520 SnPb SiHL520 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 9.2 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 6.5 A C a Pulsed Drain Current I 36 DM Linear Derating Factor 0.40 W/C b Single Pulse Avalanche Energy E 170 mJ AS a Avalanche Current I 9.2 A AR a Repetitive Avalanche Energy E 6.0 mJ AR Maximum Power Dissipation T = 25 C P 60 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 3.0 mH, R = 25 , I = 9.2 A (see fig. 12). DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91298 www.vishay.com S11-0518-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL520, SiHL520 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greasd Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -2.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 5.5 A - - 0.27 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 4.6 A - - 0.38 GS D Forward Transconductance g V = 50 V, I = 5.5 A 3.2 - - S fs DS D Dynamic Input Capacitance C - 490 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -- g 12 = 9.2 A, V = 80 V, I D DS Gate-Source Charge Q --V = 5.0 V nC gs GS 3.0 b see fig. 6 and 13 Gate-Drain Charge Q -- 7.1 gd Turn-On Delay Time t -9.8 - d(on) Rise Time t -64 - r V = 50 V, I = 9.2 A, DD D ns b Turn-Off Delay Time t -2R = 9.0 , R = 5.2 , see fig. 101- d(off) g D Fall Time t -27- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 9.2 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 36 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 9.2 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 190 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.83 1.0 C rr Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) Forward Turn-On Time t on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91298 2 S11-0518-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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