PMZ350XN,315 NXP

PMZ350XN N-channel TrenchMOS standard level FET Rev. 01 21 February 2008 Product data sheet BOTTOM VIEW 1. Product prole 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Prole 55 % lower than SOT23 n Footprint 90 % smaller than SOT23 n Low on-state resistance n Low threshold voltage n Leadless package n fast switching 1.3 Applications n Driver circuits n Load switching in portable appliances n DC-to-DC converters 1.4 Quick reference data n V 30 V n I 1.87 A DS D n R 420 m n P 2.50 W DSon tot 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 gate (G) D 1 2 source (S) 3 2 3 drain (D) G Transparent top view mbb076 S SOT833 (SC-101)PMZ350XN NXP Semiconductors N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMZ350XN SC-101 leadless ultra small plastic package 3 solder lands SOT883 body 1.0 0.6 0.5 mm 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 150 C - 30 V DS j V drain-gate voltage (DC) 25 C T 150 C R =20k -30 V DGR j GS V gate-source voltage - - 12 V GS I drain current T =25 C V = 10 V see Figure 2 and 3 - 1.87 A D mb GS T = 100 C V = 10 V see Figure 2 - 1.18 A mb GS I peak drain current T =25 C pulsed t 10 s see Figure 3 - 3.74 A DM mb p P total power dissipation T =25 C see Figure 1 - 2.50 W tot mb T storage temperature - - 55 +150 C stg T junction temperature - - 55 +150 C j Source-drain diode I source current T =25 C - 1.87 A S mb I peak source current T =25 C pulsed t 10 s - 3.74 A SM mb p Electrostatic discharge V electrostatic discharge voltage human body model C = 100 pF -65 V esd R = 1.5 k(all pins) machine model C = 200 pF (all pins) -35 V PMZ350XN 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 21 February 2008 2 of 13