PMZ950UPELYL Nexperia

PMZ950UPEL 20 V, P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 0.6 0.48 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance R = 1.02 DSon 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMZ950UPEL 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa259 Table 3. Ordering information Type number Package Name Description Version PMZ950UPEL DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 SOT883 solder lands 6. Marking Table 4. Marking codes Type number Marking code PMZ950UPEL L2 PMZ950UPEL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 June 2016 2 / 15