PSMN005-30K,518 NXP

PSMN005-30K N-channel TrenchMOS SiliconMAX logic level FET Rev. 2 22 December 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications Computer motherboards Switched-mode power supplies DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150C --30 V DS j j I drain current T =80 C; V =10 V; see Figure 1 --20 A D sp GS P total power dissipation T =80 C; see Figure 2 --3.5 W tot sp Static characteristics R drain-source on-state V =10V; I =15A; T =25C; -4.4 5.5 m DSon GS D j resistance see Figure 9; see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V; I =20A; V =15V; -14 -nC GD GS D DS T =25C; see Figure 11 jPSMN005-30K Nexperia N-channel TrenchMOS SiliconMAX logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 8 5 2S source 3S source G 4 G gate mbb076 S 5 D drain 1 4 6 D drain SOT96-1 (SO8) 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN005-30K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 150 C - 30 V DS j j V gate-source voltage -20 20 V GS I drain current T =80 C; V =10 V; see Figure 1 -20 A D sp GS I peak drain current T = 25 C; pulsed; t 10 s; -60 A DM sp p see Figure 3 P total power dissipation T =80 C; see Figure 2 -3.5 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =80C - 20 A S sp I peak source current T = 25 C; pulsed; t 10 s - 60 A SM sp p PSMN005-30K All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 22 December 2011 2 of 13