X-On Electronics has gained recognition as a prominent supplier of PSMN041-80YLX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN041-80YLX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN041-80YLX Nexperia

PSMN041-80YLX electronic component of Nexperia
PSMN041-80YLX Nexperia
PSMN041-80YLX MOSFETs
PSMN041-80YLX  Semiconductors

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See Product Specifications
Part No. PSMN041-80YLX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 80 V 41 mOhm logiclevel MOSFET
Datasheet: PSMN041-80YLX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0563 ea
Line Total: USD 1.06 
Availability - 2875
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
44
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 1.2028
10 : USD 0.9718
30 : USD 0.7352
100 : USD 0.5718
500 : USD 0.5192
1500 : USD 0.493

2875
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.0563
10 : USD 0.6913
100 : USD 0.4092
500 : USD 0.3278
1500 : USD 0.2882
3000 : USD 0.2442
9000 : USD 0.2299

1354
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.826
10 : USD 0.5824
25 : USD 0.4774
47 : USD 0.3752
128 : USD 0.3556

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN041-80YLX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN041-80YLX and other electronic components in the MOSFETs category and beyond.

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PSMN041-80YL N-channel 80 V 41 m logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive LFPAK56 package is footprint compatible with other Power-SO8 types Qualified to 175 C 3. Applications DC-to-DC converters Load switch TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 25 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 64 W tot mb Static characteristics R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 12 - 32.8 41 m DSon GS D j resistance V = 10 V I = 5 A T = 175 C - - 103 m GS D j Fig. 13 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 5 A V = 64 V - 4.3 - nC GD GS D DS T = 25 C Fig. 14 Fig. 15 j Q total gate charge - 21.9 - nC G(tot)Nexperia PSMN041-80YL N-channel 80 V 41 m logic level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 25 A - - 23.9 mJ DS(AL)S GS j(init) D source avalanche V 80 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN041-80YL LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN041-80YL 04180 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 100 C Fig. 1 - 18 A D GS mb PSMN041-80YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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