X-On Electronics has gained recognition as a prominent supplier of PSMN1R4-40YLDX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R4-40YLDX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN1R4-40YLDX Nexperia

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PSMN1R4-40YLDX Nexperia
PSMN1R4-40YLDX MOSFETs
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Part No. PSMN1R4-40YLDX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CH 40V 1.4 mOhm logic level MOSFET
Datasheet: PSMN1R4-40YLDX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7857 ea
Line Total: USD 1.79 
Availability - 2041
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2041
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 1
Multiples : 1
1 : USD 1.7857
10 : USD 1.4796
30 : USD 1.0133
100 : USD 0.8682
500 : USD 0.8031
1500 : USD 0.7734

7085
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 2.442
10 : USD 1.595
100 : USD 1.166
250 : USD 1.166
500 : USD 0.9636
1000 : USD 0.9625
1500 : USD 0.8371
3000 : USD 0.8195
9000 : USD 0.8184

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN1R4-40YLDX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R4-40YLDX and other electronic components in the MOSFETs category and beyond.

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PSMN1R4-40YLD N-channel 40 V, 1.4 m, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology 14 March 2019 Product data sheet 1. General description 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 240 A capability Avalanche rated, 100% tested at I = 190 A AS NextPower-S3 technology delivers superfast switching with soft recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications Synchronous rectification DC-to-DC converters High performance & high efficiency server power supply Motor control Power OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 240 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 238 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.38 1.85 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 25 C - 1.12 1.4 m GS D j Fig. 10 Dynamic characteristicsNexperia PSMN1R4-40YLD N-channel 40 V, 1.4 m, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Symbol Parameter Conditions Min Typ Max Unit Q gate-drain charge I = 25 A V = 20 V V = 4.5 V - 13 26 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 45 65 nC G(tot) 1 240A continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base connected to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R4-40YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN1R4-40YLD 1D440L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 238 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 240 A D GS mb V = 10 V T = 100 C Fig. 2 - 214 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1201 A DM p mb T storage temperature -55 175 C stg PSMN1R4-40YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 14 March 2019 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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