PSMN1R4-40YLD N-channel 40 V, 1.4 m, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology 14 March 2019 Product data sheet 1. General description 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 240 A capability Avalanche rated, 100% tested at I = 190 A AS NextPower-S3 technology delivers superfast switching with soft recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications Synchronous rectification DC-to-DC converters High performance & high efficiency server power supply Motor control Power OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 240 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 238 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.38 1.85 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 25 C - 1.12 1.4 m GS D j Fig. 10 Dynamic characteristicsNexperia PSMN1R4-40YLD N-channel 40 V, 1.4 m, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Symbol Parameter Conditions Min Typ Max Unit Q gate-drain charge I = 25 A V = 20 V V = 4.5 V - 13 26 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 45 65 nC G(tot) 1 240A continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base connected to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R4-40YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN1R4-40YLD 1D440L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 238 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 240 A D GS mb V = 10 V T = 100 C Fig. 2 - 214 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1201 A DM p mb T storage temperature -55 175 C stg PSMN1R4-40YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 14 March 2019 2 / 13