X-On Electronics has gained recognition as a prominent supplier of PSMN2R6-40YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R6-40YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R6-40YS,115 Nexperia

PSMN2R6-40YS,115 electronic component of Nexperia
PSMN2R6-40YS,115 Nexperia
PSMN2R6-40YS,115 MOSFETs
PSMN2R6-40YS,115  Semiconductors

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See Product Specifications
Part No. PSMN2R6-40YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH 40V 2.8 mOhm Standard MOSFET
Datasheet: PSMN2R6-40YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8875 ea
Line Total: USD 1.89 
Availability - 26388
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
318
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 140
Multiples : 1
140 : USD 0.9291
250 : USD 0.7853

26388
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 1.8875
10 : USD 1.236
100 : USD 0.8811
500 : USD 0.7876
1000 : USD 0.7436
1500 : USD 0.7403
9000 : USD 0.7227
24000 : USD 0.7051

318
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 140
Multiples : 1
140 : USD 0.9295

1455
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 1500
Multiples : 1500
1500 : USD 1.3424

1455
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 1500
Multiples : 1500
1500 : USD 1.218

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
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Technology
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the PSMN2R6-40YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R6-40YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Rev. 01 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC convertors Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 131 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 179 mJ DS(AL)S GS j(init) drain-source I = 100 A V 40 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =25A -14 -nC GD GS D V = 20 V see Figure 14 DS Q total gate charge - 63 - nC G(tot) see Figure 15Nexperia PSMN2R6-40YS N-channel LFPAK 40 V 2.8 m standard level MOSFET Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =25A --3.7 m DSon GS D on-state resistance T = 100 C see Figure 12 j see Figure 13 V =10V I =25A -2 2.8 m GS D T = 25 C see Figure 12 j see Figure 13 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D drain 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R6-40YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 Nexperia B.V. 2017. All rights reserved PSMN2R6-40YS 1 Product data sheet Rev. 01 23 June 2009 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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