X-On Electronics has gained recognition as a prominent supplier of PSMN2R8-40BS,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R8-40BS,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R8-40BS,118 Nexperia

PSMN2R8-40BS,118 electronic component of Nexperia
PSMN2R8-40BS,118 Nexperia
PSMN2R8-40BS,118 MOSFETs
PSMN2R8-40BS,118  Semiconductors

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See Product Specifications
Part No. PSMN2R8-40BS,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 40 V 100A (Tc) 211W (Tc) Surface Mount D2PAK
Datasheet: PSMN2R8-40BS,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 333
Multiples : 333
333 : USD 0.6863
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.8993
10 : USD 2.0713
100 : USD 1.6807
500 : USD 1.3657
800 : USD 1.1722
2400 : USD 1.1005
4800 : USD 1.0891
9600 : USD 1.0891
24800 : USD 1.088
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.4438
5 : USD 2.2073
10 : USD 1.6541
25 : USD 1.5648
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R8-40BS,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R8-40BS,118 and other electronic components in the MOSFETs category and beyond.

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PSMN2R8-40BS N-channel 40 V 2.9 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --211 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state resistance V =10V I =10A T =100C - 3.58 4.2 m R DSon GS D j see Figure 13 see Figure 14 V =10V I =10A T =25C - 2.47 2.9 m GS D j see Figure 14 Dynamic characteristics Q gate-drain charge V =10V I =10A V =20V -17 -nC GD GS D DS see Figure 15 see Figure 16 Q total gate charge - 71 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C - - 407 mJ DS(AL)S GS j(init) avalanche energy I =100 A V 40 V unclamped D sup R =50 GS 1 Continuous current rating is limited by package.PSMN2R8-40BS Nexperia N-channel 40 V 2.9 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R8-40BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN2R8-40BS PSMN2R8-40BS PSMN2R8-40BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 20 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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