X-On Electronics has gained recognition as a prominent supplier of PSMN2R9-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R9-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R9-25YLC,115 Nexperia

PSMN2R9-25YLC,115 electronic component of Nexperia
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Part No.PSMN2R9-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 25V 3.15 mOhms
Datasheet: PSMN2R9-25YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8833 ea
Line Total: USD 0.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.4254
3000 : USD 0.4211
6000 : USD 0.4169
9000 : USD 0.4126
12000 : USD 0.4086
15000 : USD 0.4045
24000 : USD 0.4004
30000 : USD 0.3964
75000 : USD 0.3925

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.7355
3000 : USD 0.6427
7500 : USD 0.5984
10500 : USD 0.5763

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.585
10 : USD 0.5791
125 : USD 0.5324
750 : USD 0.4329

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8833
1000 : USD 0.5126
1500 : USD 0.3135
3000 : USD 0.2882

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1927
5 : USD 1.0747
20 : USD 0.8046
25 : USD 0.8033
54 : USD 0.7599

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 26
Multiples : 1
26 : USD 0.5351

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN2R9-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R9-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R9-25YLC N-channel 25 V 3.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD and QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source 25 C T 175 C - - 25 V DS j voltage 1 I drain current T =25 C V =10V --100 A D mb GS see Figure 1 total power T =25 C see Figure 2 --92 W P tot mb dissipation T junction -55 - 175 C j temperaturePSMN2R9-25YLC Nexperia N-channel 25 V 3.15 m logic level MOSFET in LFPAK using Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V = 4.5 V I =25A - 3.45 4.1 m DSon GS D on-state T =25C j resistance see Figure 12 V =10V I =25A - 2.65 3.15 m GS D T =25C j see Figure 12 Dynamic characteristics Q gate-drain V = 4.5 V I =25A -4.4 -nC GD GS D charge V =12V DS see Figure 14 see Figure 15 Q total gate -16 -nC G(tot) charge 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R9-25YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN2R9-25YLC 2C925L 1 % = placeholder for manufacturing site code. PSMN2R9-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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