X-On Electronics has gained recognition as a prominent supplier of PSMN3R0-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R0-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN3R0-30YL,115 Nexperia

PSMN3R0-30YL,115 electronic component of Nexperia
PSMN3R0-30YL,115 Nexperia
PSMN3R0-30YL,115 MOSFETs
PSMN3R0-30YL,115  Semiconductors

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See Product Specifications
Part No. PSMN3R0-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET <=30V N CH TRENCHFET
Datasheet: PSMN3R0-30YL,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.276 ea
Line Total: USD 1.28 
Availability - 620
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1445
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 194
Multiples : 1
194 : USD 0.6687
250 : USD 0.6621
500 : USD 0.6097
1000 : USD 0.5117

620
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.276
10 : USD 0.8701
100 : USD 0.6292
500 : USD 0.5423
1000 : USD 0.5335
1500 : USD 0.4609
3000 : USD 0.4598
24000 : USD 0.4587

13095
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 901
Multiples : 1
901 : USD 0.5412
1000 : USD 0.5111

1445
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 194
Multiples : 1
194 : USD 0.6687

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Channel Mode
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Typical Turn-On Delay Time
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We are delighted to provide the PSMN3R0-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R0-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN3R0-30YL N-channel 30 V 3 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --81 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =15A -2.193 m R DSon GS D resistance T =25C j Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -5.1 -nC GD GS D V = 12 V see Figure 14 DS see Figure 15 Q total gate charge V = 4.5 V I =10A -21 -nC G(tot) GS D V = 12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --75 mJ DS(AL)S GS j(init) drain-source avalanche I = 100 A V 30 V D sup R =50 unclamped energy GS 1 Continuous current is limited by package.PSMN3R0-30YL Nexperia N-channel 30 V 3 m logic level MOSFET in LFPAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R0-30YL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN3R0-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 10 March 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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