X-On Electronics has gained recognition as a prominent supplier of PSMN2R7-30BL,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R7-30BL,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN2R7-30BL,118 Nexperia

PSMN2R7-30BL,118 electronic component of Nexperia
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Part No.PSMN2R7-30BL,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Std N-chanMOSFET
Datasheet: PSMN2R7-30BL,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1195 ea
Line Total: USD 2.12 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 4800
Multiples : 800
4800 : USD 1.4922
8000 : USD 1.4864
12000 : USD 1.4805
20000 : USD 1.4745
24000 : USD 1.4685
28000 : USD 1.4624
40000 : USD 1.4561
100000 : USD 1.4499
200000 : USD 1.4435
500000 : USD 1.4371

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 3.6327
10 : USD 3.1428
100 : USD 2.5251

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 3.6327
10 : USD 3.1428
100 : USD 2.5251

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 800
Multiples : 800
800 : USD 2.1515
1600 : USD 1.719
2400 : USD 1.6004
5600 : USD 1.5412

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.1195
10 : USD 1.4272
100 : USD 1.0427
800 : USD 0.8052
2400 : USD 0.8052

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.997
5 : USD 1.7868
12 : USD 1.3507
31 : USD 1.277

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R7-30BL,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R7-30BL,118 and other electronic components in the MOSFETs category and beyond.

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PSMN2R7-30BL N-channel 30 V 3.0 m logic level MOSFET in D2PAK Rev. 1 21 March 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switiching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25C V =10V see Figure 1 - - 100 A D mb GS P total power dissipation T =25C see Figure 2 - - 170 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T = 100 C -3.6 4.2 m DSon GS D j resistance see Figure 13 see Figure 12 =10V I =25A T =25C -2.573 m V GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V=15V -8 -nC GD GS D DS Q total gate charge V =4.5 V I =25A V =15V -32 -nC G(tot) GS D DS see Figure 14 see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C I =100 A - - 300 mJ DS(AL)S GS j(init) D drain-source V 30 V R =50 unclamped sup GS avalanche energy 1 Continuous current is limited by package.PSMN2R7-30BL Nexperia N-channel 30 V 3.0 m logic level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R7-30BL D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN2R7-30BL PSMN2R7-30BL PSMN2R7-30BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 21 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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