PSMN2R7-30PL NXP

PSMN2R7-30PL N-channel 30 V 2.7 m logic level MOSFET in TO-220 Rev. 02 2 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --170W tot mb T junction temperature -55 - 175 C j Static characteristics 2 drain-source on-state V =10 V I =15A -2.2 2.7 m R DSon GS D resistance T =25C see Figure 12 j Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -8 -nC GD GS D V =15V see Figure 14 DS Q total gate charge - 32 - nC G(tot) see Figure 15 Avalanche ruggedness non-repetitive V =10 V T =25C --300mJ E DS(AL)S GS j(init) drain-source avalanche I =100 A V 30 V D sup energy R =50 unclamped GS 1 Continuous current is limited by package. 2 Measured 3 mm from package.PSMN2R7-30PL NXP Semiconductors N-channel 30 V 2.7 m logic level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R7-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN2R7-30PL All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 2 November 2010 2 of 15