PSMN1R9-40PLQ Nexperia

PSMN1R9-40PL N-channel 40 V, 1.7 m logic level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust construction for demanding applications Logic level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V T = 25 C Fig. 1 1 - - 150 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 349 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.4 1.7 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q total gate charge V = 10 V I = 25 A V = 32 V - 230 - nC G(tot) GS D DS Fig. 13 Fig. 14 Q gate-drain charge - 40.9 - nC GD Avalanche ruggedness E non-repetitive drain- I = 150 A V 40 V R = 50 - - 801.1 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 3 1 Continuous current is limited by package.Nexperia PSMN1R9-40PL N-channel 40 V, 1.7 m logic level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R9-40PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Marking Table 4. Marking codes Type number Marking code PSMN1R9-40PL PSMN1R9-40PL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage -20 20 V GS I drain current T = 100 C V = 10 V Fig. 1 1 - 150 A D mb GS T = 25 C V = 10 V Fig. 1 1 - 150 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 1332 A DM mb p PSMN1R9-40PL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 February 2013 2 / 13