PSMN1R0-40YLD N-channel 40 V, 1.1 m, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 30 November 2017 Product data sheet 1. General description 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 280 A capability Avalanche rated, 100% tested at I = 190 A AS NextPower-S3 technology delivers superfast switching with soft recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints Low parasitic inductance and resistance 3. Applications Synchronous rectification DC-to-DC converters High performance & high efficiency server power supply Motor control Power ORing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 150 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 280 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 198 W tot mb T junction temperature -55 - 150 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.1 1.4 m DSon GS D j resistance Fig. 10 Fig. 11 V = 10 V I = 25 A T = 25 C - 0.93 1.1 m GS D j Fig. 10 Fig. 11Nexperia PSMN1R0-40YLD N-channel 40 V, 1.1 m, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge I = 25 A V = 20 V V = 4.5 V - 17 - nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 59 - nC G(tot) 1 280A continuous current has been successfully demonstrated during application tests. Practically, the current will be limited by PCB, thermal design and operation temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK56 Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R0-40YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56) 4 SOT1023 Power-SO8 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN1R0-40YLD 1D040L PSMN1R0-40YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 November 2017 2 / 14