X-On Electronics has gained recognition as a prominent supplier of PSMN045-80YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN045-80YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN045-80YS,115 Nexperia

PSMN045-80YS,115 electronic component of Nexperia
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Part No.PSMN045-80YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 80V 17A
Datasheet: PSMN045-80YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6039 ea
Line Total: USD 0.6 
Availability - 27683
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2206
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 443
Multiples : 1
443 : USD 0.2937
500 : USD 0.2885
1000 : USD 0.2834

1455
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.2665
3000 : USD 0.2665
6000 : USD 0.26
7500 : USD 0.2587
22500 : USD 0.2535

27683
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6039
10 : USD 0.4653
100 : USD 0.2992
500 : USD 0.2629
1000 : USD 0.2541
1500 : USD 0.2332
3000 : USD 0.2332
9000 : USD 0.2321
24000 : USD 0.2266

2206
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 443
Multiples : 1
443 : USD 0.3367

30555
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1500
Multiples : 1500
1500 : USD 0.2625
3000 : USD 0.2521
9000 : USD 0.2447

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN045-80YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN045-80YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN045-80YS N-channel LFPAK 80 V 45 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j I drain current T =25C V=10V --24 A D mb GS P total power T = 25 C see Figure 2 --56 W tot mb dissipation T junction temperature -55 - 175 C j Static characteristics R drain-source V =10V I =5A --72 m DSon GS D on-state resistance T = 100 C see Figure 13 j V =10V I =5A T = 25 C - 37 45 m GS D jPSMN045-80YS Nexperia N-channel LFPAK 80 V 45 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =15A -3.1 -nC GD GS D V =40 V see Figure 14 DS Q total gate charge - 12.5 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --18 mJ DS(AL)S GS j(init) drain-source I =22A V 80 V D sup avalanche energy R =50 unclamped GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN045-80YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN045-80YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 25 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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