PSMN057-200B,118 Nexperia

PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 3. Applications DC-to-DC converters Switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 200 V DS j j I drain current T = 25 C - - 39 A D mb P total power dissipation - - 250 W tot Static characteristics R drain-source on-state V = 10 V; I = 17 A; T = 25 C - 41 57 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 10 V; I = 39 A; V = 160 V; - 37 50 nC GD GS D DS T = 25 C jNexperia PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base; connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN057-200B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN057-200B PSMN057-200B 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 175 C - 200 V DS j j V drain-gate voltage T 25 C; T 175 C; R = 20 k - 200 V DGR j j GS V gate-source voltage -20 20 V GS I drain current T = 100 C - 27.5 A D mb T = 25 C - 39 A mb I peak drain current pulsed; T = 25 C - 156 A DM mb P total power dissipation T = 25 C - 250 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j PSMN057-200B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 August 2013 2 / 11