PSMN102-200Y,115 Nexperia

PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Suitable for high frequency thermal resistance applications due to fast switching characteristics 1.3 Applications Class D amplifier Motion control DC-to-DC converters Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 150 C - - 200 V DS j j voltage I drain current T =25C V =10V --21.5A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --113W tot mb dissipation Static characteristics R drain-source V =10V I =12A -86 102m DSon GS D on-state T =25C see Figure 9 j resistance see Figure 10 Dynamic characteristics Q gate-drain charge V =10V I =12A -10.1-nC GD GS D V = 100 V see Figure 11 DS see Figure 12PSMN102-200Y Nexperia N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN102-200Y LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 200 V DS j j V drain-gate voltage T 25 C T 150 C R =20k - 200 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T =25C see Figure 1 - 21.5 A D GS mb see Figure 3 V =10V T = 100 C see Figure 1 - 13.6 A GS mb I peak drain current pulsed t 10 s T =25C -65 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 -113 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 52 A S mb I peak source current pulsed t 10 s T = 25 C - 208 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 10.8 A - 202 mJ DS(AL)S GS j(init) D avalanche energy V 200 V unclamped t = 0.14 ms sup p R =50 GS PSMN102-200Y All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 16 March 2011 2 of 13