PSMN130-200D,118 Nexperia

PSMN130-200D,118 electronic component of Nexperia
PSMN130-200D,118 Nexperia
PSMN130-200D,118 MOSFETs
PSMN130-200D,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN130-200D,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN130-200D,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN130-200D,118
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH TRENCH 200V 20A
Datasheet: PSMN130-200D,118 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 10000
Multiples : 1
QtyUnit Price
10000$ 0.5658
N/A

Obsolete

Availability 0
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.8142
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1015
10$ 1.8565
100$ 1.4676
500$ 1.1381
1000$ 0.8985
N/A

Obsolete

Availability 0
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.5544
5000$ 0.5544
7500$ 0.5544
10000$ 0.5544
N/A

Obsolete

Availability 0
MOQ : 15
Multiples : 1
QtyUnit Price
15$ 0.7452
25$ 0.6205
100$ 0.5061
250$ 0.4959
500$ 0.4959
1000$ 0.4959
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.3152
10$ 0.8621
100$ 0.6655
500$ 0.6088
1000$ 0.5302
2500$ 0.5232
5000$ 0.5222
10000$ 0.4984
25000$ 0.4825
N/A

Obsolete

Availability 0
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.618
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5443
157$ 0.5145
313$ 0.5065
625$ 0.4985
1250$ 0.4904
2500$ 0.4824
5000$ 0.4743
N/A

Obsolete

Availability 0
MOQ : 15
Multiples : 1
QtyUnit Price
15$ 1.1765
25$ 1.0403
100$ 0.8084
250$ 0.7219
500$ 0.7145
1000$ 0.6441
3000$ 0.6377
6000$ 0.6251
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Transistor Type
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN130-200D,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN130-200D,118 and other electronic components in the MOSFETs category and beyond.

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PSMN130-200D N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 20 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Suitable for high frequency thermal resistance applications due to fast switching characteristics Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC converters Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 200 V DS j j voltage I drain current T =25C V=10V --20 A D mb GS P total power T=25C --150W tot mb dissipation Static characteristics R drain-source V =10V I =25A -120130m DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =10V I =20A -22 -nC GD GS D V = 160 V T =25C DS jPSMN130-200D Nexperia N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN130-200D DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) PSMN130-200D All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 20 December 2010 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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