X-On Electronics has gained recognition as a prominent supplier of PSMN1R0-40YSHX MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN1R0-40YSHX MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN1R0-40YSHX Nexperia

PSMN1R0-40YSHX electronic component of Nexperia
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See Product Specifications
Part No.PSMN1R0-40YSHX
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET PSMN1R0-40YSHSOT10234 LEADS
Datasheet: PSMN1R0-40YSHX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.806 ea
Line Total: USD 2.81

Availability - 4315
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 3.2315
10 : USD 2.714
100 : USD 2.2425
500 : USD 2.0355
1000 : USD 2.001
1500 : USD 1.6675

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN1R0-40YSHX from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R0-40YSHX and other electronic components in the MOSFET category and beyond.

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PSMN1R0-40YSH N-channel 40 V, 1 m, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 290 A continuous I D(max) Avalanche rated, 100% tested NextPower-S3 technology delivers superfast switching with soft body-diode recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Strong linear-mode / SOA rating High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability Low parasitic inductance and resistance 3. Applications High-performance synchronous rectification DC-to-DC converters High performance and high efficiency server power supply Brushless DC motor control Battery protection Load-switch and eFuse 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 290 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 333 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 0.85 1 m DSon GS D j resistance Fig. 10 Dynamic characteristicsNexperia PSMN1R0-40YSH N-channel 40 V, 1 m, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Symbol Parameter Conditions Min Typ Max Unit Q gate-drain charge I = 25 A V = 20 V V = 10 V - 13 27 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 87 122 nC G(tot) 1 290A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK56E Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R0-40YSH LFPAK56E plastic, single-ended surface-mounted package (LFPAK56) SOT1023 Power-SO8 4 leads 1.27 mm pitch 7. Marking Table 4. Marking codes Type number Marking code PSMN1R0-40YSH 1H0S40J 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 333 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 290 A D GS mb V = 10 V T = 100 C Fig. 2 - 277 A GS mb PSMN1R0-40YSH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 25 April 2019 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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