PSMNR90-40YLH N-channel 40 V, 0.94 m, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 26 April 2019 Product data sheet 1. General description 300 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 300 A continuous I D(max) Avalanche rated, 100% tested NextPower-S3 technology delivers superfast switching with soft body-diode recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Strong linear-mode / SOA rating Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability Low parasitic inductance and resistance 3. Applications High-performance synchronous rectification DC-to-DC converters High performance and high efficiency server power supply Brushless DC motor control Battery protection Load-switch and eFuse 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 300 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 333 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 0.97 1.2 m DSon GS D j resistance Fig. 10 V = 10 V I = 25 A T = 25 C - 0.76 0.94 m GS D j Fig. 10 Dynamic characteristicsNexperia PSMNR90-40YLH N-channel 40 V, 0.94 m, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Symbol Parameter Conditions Min Typ Max Unit Q gate-drain charge I = 25 A V = 20 V V = 4.5 V - 13 26 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 54 76 nC G(tot) 1 300A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK56E Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMNR90-40YLH LFPAK56E plastic, single-ended surface-mounted package (LFPAK56) SOT1023 Power-SO8 4 leads 1.27 mm pitch 7. Marking Table 4. Marking codes Type number Marking code PSMNR90-40YLH H90L40J 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 333 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 300 A D GS mb V = 10 V T = 100 C Fig. 2 - 285 A GS mb PSMNR90-40YLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 26 April 2019 2 / 12