X-On Electronics has gained recognition as a prominent supplier of SIHD2N80AE-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHD2N80AE-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHD2N80AE-GE3 Vishay

SIHD2N80AE-GE3 electronic component of Vishay
SIHD2N80AE-GE3 Vishay
SIHD2N80AE-GE3 MOSFETs
SIHD2N80AE-GE3  Semiconductors

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See Product Specifications
Part No. SIHD2N80AE-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Nch 800V Vds 30V Vgs TO-252 DPAK
Datasheet: SIHD2N80AE-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.96 ea
Line Total: USD 1.96 
Availability - 17
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 1.96
5 : USD 1.75
12 : USD 1.47
32 : USD 1.386
300 : USD 1.33

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIHD2N80AE-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHD2N80AE-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SIHD2N80AE-GE3 is a n-channel power MOSFET with a voltage rating of 800 V, a drain-source voltage rating of 30 V, and a gate-source voltage rating of TO-252. It is constructed with high-frequency trench silicon technology, which helps to minimize losses in order to maximize efficiency. The device is housed in a DPAK package, which is an industry-standard surface mount plastic TO-220 package. This MOSFET is suitable for high-frequency switching applications, making it ideal for use in inverters, inductive load switching, and load commutation purposes.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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