SiHD5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design V (V) at T max. 550 DS J - Low area specific on-resistance R max. ( ) at 25 C V = 10 V 1.5 DS(on) GS - Low input capacitance (C ) iss Q max. (nC) 20 g - Reduced capacitive switching losses Q (nC) 3 - High body diode ruggedness gs Available - Avalanche energy rated (UIS) Q (nC) 5 gd Optimal efficiency and operation Configuration Single - Low cost - Simple gate drive circuitry D - Low figure-of-merit (FOM): R x Q on g DPAK - Fast switching (TO-252) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D G APPLICATIONS S Consumer electronics G - Displays (LCD or plasma TV) S Server and telecom power supplies N-Channel MOSFET - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free SiHD5N50D-E3 SiHD5N50D-GE3 SiHD5N50DT1-GE3 Lead (Pb)-free and Halogen-free SiHD5N50DT4-GE3 SiHD5N50DT5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 5.3 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 3.4 A C a Pulsed Drain Current I 10 DM Linear Derating Factor 0.83 W/C b Single Pulse Avalanche Energy E 28.8 mJ AS Maximum Power Dissipation P 104 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.28 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 5 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S16-0109-Rev. C, 25-Jan-16 Document Number: 91499 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHD5N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -1.2 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 250 A - 0.58 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 2.5 A - 1.2 1.5 DS(on) GS D a Forward Transconductance g V = 20 V, I = 2.5 A - 1.8 - S fs DS D Dynamic Input Capacitance C - 325 - iss V = 0 V, GS Output Capacitance C -3V = 100 V, 4- oss DS f = 1 MHz Reverse Transfer Capacitance C -6- rss pF Effective Output Capacitance, Energy C -31 - o(er) b Related V = 0 V to 400 V, V = 0 V DS GS Effective Output Capacitance, Time C -41 - c o(tr) Related Total Gate Charge Q -10 20 g Gate-Source Charge Q -3V = 10 V I = 2.5 A, V = 400 V - nC gs GS D DS Gate-Drain Charge Q -5- gd Turn-On Delay Time t -12 24 d(on) Rise Time t -11 22 r V = 400 V, I = 2.5 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -1g GS 428 d(off) Fall Time t -1122 f Gate Input Resistance R f = 1 MHz, open drain - 1.7 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5 S showing the A G integral reverse Pulsed Diode Forward Current I -- 20 SM P - N junction diode S Diode Forward Voltage V T = 25 C, I = 4 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 320 - ns rr T = 25 C, I = I = 2.5 A, J F S Reverse Recovery Charge Q -1.2 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -8 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-0109-Rev. C, 25-Jan-16 Document Number: 91499 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000