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X-On Electronics has gained recognition as a prominent supplier of SIB914DK-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIB914DK-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIB914DK-T1-GE3 Vishay

SIB914DK-T1-GE3 electronic component of Vishay
SIB914DK-T1-GE3 Vishay
SIB914DK-T1-GE3 MOSFETs
SIB914DK-T1-GE3  Semiconductors

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See Product Specifications
Part No. SIB914DK-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 781-SIB912DK-GE3
Datasheet: SIB914DK-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.223 ea
Line Total: USD 669 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.223

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIB914DK-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIB914DK-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET a 0.113 at V = 4.5 V GS 1.5 New Thermally Enhanced PowerPAK RoHS a = 2.5 V SC-75 Package COMPLIANT 0.138 at V 1.5 GS - Small Footprint Area a 0.190 at V = 1.8 V 8 1.5 nC GS 1.5 - Low On-Resistance 0.280 at V = 1.5 V GS 1.0 0.480 at V = 1.2 V GS 0.3 APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable PowerPAK SC75-6L-Dual Devices DC/DC Converter D D 1 2 1 S 1 Marking Code 2 G 1 3 D 1 C B X D 2 Part code G G 1 2 X X X D 1 D 2 Lot Traceability 6 G 2 and Date code 5 1.60 mm 1.60 mm S 2 S S 4 1 2 Ordering Information: SiB914DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS a T = 25 C C 1.5 a T = 70 C 1.5 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A 1.5 a, b, c A T = 70 C A 1.5 Pulsed Drain Current I 6 DM a T = 25 C C 1.5 I Continuous Source-Drain Diode Current S b, c T = 25 C 0.9 A T = 25 C 3.1 C T = 70 C 2.0 C P Maximum Power Dissipation W D b, c T = 25 C 1.1 A b, c T = 70 C A 0.7 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 90 115 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 32 40 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiB914DK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 8V DS GS D V Temperature Coefficient V /T 8.3 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.1 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.35 0.8 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 100 nA GSS DS GS V = 8 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 8 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 6A On-State Drain Current D(on) DS GS V = 4.5 V, I = 2.5 A 0.090 0.113 GS D V = 2.5 V, I = 2.2 A 0.110 0.138 GS D a R V = 1.8 V, I = 1.9 A 0.150 0.190 Drain-Source On-State Resistance DS(on) GS D V = 1.5 V, I = 1.0 A 0.200 0.280 GS D V = 1.2 V, I = 0.1 A 0.280 0.480 GS D a g V = 4 V, I = 2.5 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 125 iss C V = 4 V, V = 0 V, f = 1 MHz Output Capacitance 68 pF oss DS GS C Reverse Transfer Capacitance 35 rss V = 4 V, V = 5 V, I = 2.5 A 1.7 2.6 DS GS D Q Total Gate Charge g 1.5 2.3 nC Q Gate-Source Charge V = 4 V, V = 4.5 V, I = 2.5 A 0.25 gs DS GS D Q Gate-Drain Charge 0.25 gd Gate Resistance R f = 1 MHz 0.7 3.5 7.0 g t Turn-On Delay Time 48 d(on) Rise Time t 714 V = 4 V, R = 2 r DD L ns I 2.0 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 22 33 d(off) Fall Time t 919 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C 1.5 S C A I Pulse Diode Forward Current 6 SM V I = 2.0 A, V = 0 V Body Diode Voltage 0.7 1.2 V SD S GS t Body Diode Reverse Recovery Time 10 15 ns rr Q Body Diode Reverse Recovery Charge 24 nC rr I = 2.0 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 4 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68792 2 S-81946-Rev. A, 25-Aug-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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