SiA923EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a TrenchFET Power MOSFET 0.054 at V = - 4.5 V GS - 4.5 New Thermally Enhanced PowerPAK SC-70 a 0.070 at V = - 2.5 V GS - 4.5 Package - 20 9.5 nC a 0.104 at V = - 1.8 V GS - 4.5 - Small Footprint Area - Low On-Resistance 0.165 at V = - 1.5 V GS - 1.5 Typical ESD Protection: 2500 V 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6 Dual Charger Switches and Load Switches for Portable Devices S S 1 2 DC/DC Converters 1 S 1 Marking Code 2 G 1 D K X 3 D 1 D 2 Part code X X X D G G 1 1 2 D 2 Lot Traceability 6 and Date code G 2 5 2.05 mm 2.05 mm S 2 4 D D 1 2 Ordering Information: SiA923EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 4.5 C a T = 70 C C - 4.5 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C - 4.5 A a, b, c T = 70 C A - 4.5 A I Pulsed Drain Current - 15 DM a T = 25 C - 4.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 1.6 A T = 25 C 7.8 C T = 70 C 5 C P Maximum Power Dissipation W D b, c T = 25 C 1.9 A b, c T = 70 C A 1.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 52 65 thJA Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State R 12.5 16 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W. Document Number: 66803 www.vishay.com S10-1535-Rev. A, 19-Jul-10 1SiA923EDJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 15 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.5 - 1.4 V GS(th) DS GS D V = 0 V, V = 4.5 V 0.3 3 DS GS I Gate-Source Leakage GSS V = 0 V, V = 8 V 3 30 DS GS A V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 3.8 A 0.044 0.054 GS D V = - 2.5 V, I = - 3.3 A 0.057 0.070 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 1 A 0.075 0.104 GS D V = - 1.5 V, I = - 0.5 A 0.097 0.165 GS D a g V = - 10 V, I = - 3.8 A 11 S Forward Transconductance fs DS D b Dynamic V = - 10 V, V = - 8 V, I = - 4.9 A 16.3 25 DS GS D Q Total Gate Charge g 9.5 14.5 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 4.9 A 1.4 gs DS GS D Q Gate-Drain Charge 2.3 gd R Gate Resistance f = 1 MHz 1 5.1 10 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 10 V, R = 2.6 16 25 r DD L I - 3.9 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 45 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 715 d(on) Rise Time t 12 20 V = - 10 V, R = 2.6 r DD L I - 3.9 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 26 40 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 4.5 S C A Pulse Diode Forward Current I - 15 SM V I = - 3.9 A, V = 0 V Body Diode Voltage - 0.9 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 13 25 ns rr Q Body Diode Reverse Recovery Charge 5.5 12 nC rr I = - 3.9 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7.5 a ns t Reverse Recovery Rise Time 5.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66803 2 S10-1535-Rev. A, 19-Jul-10