SiA931DJ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III Power MOSFET V (V) R ( ) Max. I (A) Q (Typ.) DS DS(on) D g Thermally Enhanced PowerPAK a 0.065 at V = - 10 V SC-70 Package GS - 4.5 - Small Footprint Area a 0.080 at V = - 6 V - 30 4.1 nC GS - 4.5 - Low On-Resistance a 0.100 at V = - 4.5 V - 4.5 GS 100 % R Tested g Material categorization: For definitions of PowerPAK SC-70-6 Dual compliance please see www.vishay.com/doc 99912 1 S 1 APPLICATIONS 2 G 1 Smart Phones, Tablet PCs, Mobile Computing: 3 D 1 D - Battery Switches 2 D 1 - Load Switches D 2 6 - Power Management G 2 5 2.05 mm - DC/DC Converters 2.05 mm S 2 4 Marking Code S S 1 2 D O X Part code X X X Lot Traceability G G 1 2 and Date Code Ordering Information: SiA931DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET D D 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 20 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A - 4.3 b, c T = 70 C A - 3.4 A I - 28 Pulsed Drain Current (t = 300 s) DM a T = 25 C C - 4.5 Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.6 A T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 52 65 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 12.5 16 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W. Document Number: 62859 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1163-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA931DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 24 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3.4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3 A 0.052 0.065 GS D a R V = - 6 V, I = - 2 A 0.063 0.080 Drain-Source On-State Resistance DS(on) GS D V = - 4.5 V, I = - 2 A 0.077 0.100 GS D a g V = - 15 V, I = - 3 A 8S Forward Transconductance fs DS D b Dynamic C Input Capacitance 445 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 55 pF oss DS GS C Reverse Transfer Capacitance 45 rss V = - 15 V, V = - 10 V, I = - 4 A 8.5 13 DS GS D Q Total Gate Charge g 4.1 6.2 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 4 A 1.2 gs DS GS D Q Gate-Drain Charge 1.5 gd R Gate Resistance f = 1 MHz 1.1 5.5 11 g t Turn-On Delay Time 23 45 d(on) t Rise Time V = - 15 V, R = 5 18 35 r DD L I - 3 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 17 35 D GEN g d(off) t Fall Time 510 f ns Turn-On Delay Time t 815 d(on) t Rise Time V = - 15 V, R = 5 510 r DD L I - 3 A, V = - 10 V, R = 1 Turn-Off Delay Time t 20 40 D GEN g d(off) t Fall Time 510 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 4.5 S C A I Pulse Diode Forward Current - 15 SM V I = - 3 A, V = 0 V Body Diode Voltage - 0.9 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 820 nC rr I = - 3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62859 2 S13-1163-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000