New Product SiB408DK Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.040 at V = 10 V GS 7 TrenchFET Power MOSFET 30 2.9 nC a 0.050 at V = 4.5 V GS 7 New Thermally Enhanced PowerPAK SC-75 Package - Small Footprint Area - Low On-Resistance 100 % R Tested g PowerPAK SC-75-6L-Single 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D 1 APPLICATIONS D 2 Notebook D Marking Code 3 - Load Switch G G D A E X 6 Part code S D X X X 5 Lot Traceability S 1.60 mm 1.60 mm and Date code S 4 Ordering Information: SiB408DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C C 7 a T = 70 C C 7 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 6 b, c T = 70 C A 4.8 A Pulsed Drain Current I 20 DM a T = 25 C C 7 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2 Avalanche Current Pulse I 10 AS L = 0.1 mH Avalanche Energy E 5mJ AS T = 25 C 13 C T = 70 C 8.4 C Maximum Power Dissipation P W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.6 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 41 51 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 C/W. Document Number: 64828 www.vishay.com S09-0859-Rev. A, 18-May-09 1New Product SiB408DK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 29 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 6 A 0.032 0.040 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 5 A 0.040 0.050 GS D a g V = 15 V, I = 6 A 14 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 350 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 65 pF oss DS GS C Reverse Transfer Capacitance 28 rss V = 15 V, V = 4.5 V, I = 6 A 2.9 4.4 DS GS D Q Total Gate Charge g 6.2 9.5 nC Q Gate-Source Charge V = 15 V, V = 10 V, I = 6 A 1.0 gs DS GS D Q Gate-Drain Charge 0.85 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g t Turn-On Delay Time 13 20 d(on) Rise Time t 11 17 V = 15 V, R = 15 r DD L ns I 1.0 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 11 17 d(off) Fall Time t 915 f t Turn-On Delay Time 510 d(on) Rise Time t 815 V = 15 V, R = 15 r DD L ns I 1.0 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 13 20 d(off) Fall Time t 612 f Drain-Source Body Diode Characteristics I Continuous Source-Drain Diode Current T = 25 C 7 S C A I Pulse Diode Forward Current 20 SM V I = 2.0 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 13 26 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = 2.0 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64828 2 S09-0859-Rev. A, 18-May-09