New Product SiB437EDKT Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition a 0.034 at V = - 4.5 V - 9 GS TrenchFET Power MOSFET 0.063 at V = - 1.8 V - 5 GS New Thermally Enhanced PowerPAK - 8 10.5 nC 0.084 at V = - 1.5 V - 3 GS SC-75 Package with ultra-thin 0.6 mm height 0.180 at V = - 1.2 V - 1 - Small Footprint Area GS - Low On-Resistance 100 % R Tested g Typical ESD Performance 2000 V Built in ESD Protection with Zener Diode Thin PowerPAK SC-75-6L-Single Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load Switch for Portable Devices 1 Load Switch for Low Voltage Gate Drive D 2 D D 6 Marking Code 3 G G D R 5 0.60 mm B M X S 1.60 mm Part code S 4 X X X 1.60 mm Lot Traceability and Date code D Ordering Information: SiB437EDKT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 8 DS V Gate-Source Voltage V 5 GS a T = 25 C - 9 C a T = 70 C - 9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 7.5 A b, c T = 70 C A - 6 A Pulsed Drain Current I - 25 DM a T = 25 C - 9 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2 A T = 25 C 13 C T = 70 C 8.4 C Maximum Power Dissipation P W D b, c T = 25 C 2.4 A b, c T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 41 51 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The Thin PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 67402 www.vishay.com S11-0235-Rev. A, 14-Feb-11 1New Product SiB437EDKT Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 8 V DS GS D V Temperature Coefficient V /T - 2 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.35 - 0.7 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V 5 GSS DS GS V = - 8 V, V = 0 V - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = - 8 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 15 A D(on) DS GS V = - 4.5 V, I = - 3 A 0.028 0.034 GS D V = - 1.8 V, I = - 1 A 0.050 0.063 GS D a Drain-Source On-State Resistance R DS(on) = - 1.5 V, I = - 0.5 A 0.060 0.084 V GS D V = - 1.2 V, I = - 0.5 A 0.100 0.180 GS D a Forward Transconductance g V = - 4 V, I = - 3 A 14 S fs DS D b Dynamic Q Total Gate Charge 10.5 16 nC g Gate-Source Charge Q V = - 4 V, V = - 4.5 V, I = - 7.4 A 1.5 gs DS GS D Gate-Drain Charge Q 3.3 gd Gate Resistance R f = 1 MHz 80 400 800 g Turn-On Delay Time t 90 180 d(on) Rise Time t 170 340 r V = - 4 V, R = 0.7 DD L ns I - 6 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 690D GEN g 1380 d(off) Fall Time t 630 1260 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 9 S C A Pulse Diode Forward Current I - 25 SM Body Diode Voltage V I = - 6 A, V = 0 V - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 30 60 ns rr Body Diode Reverse Recovery Charge Q 12 25 nC rr I = - 6 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 12 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67402 2 S11-0235-Rev. A, 14-Feb-11