New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 0.295 at V = - 4.5 V - 2.6 GS New Thermally Enhanced PowerPAK RoHS - 20 0.420 at V = - 2.5 V 1.6 nC GS - 2.2 COMPLIANT SC-75 Package 0.560 at V = - 1.8 V - Small Footprint Area GS - 1.9 APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable PowerPAK SC75-6L-Dual Devices S S 1 2 1 S 1 Marking Code 2 G 1 3 D A X D G G 1 1 2 D 2 Part code X X X D 1 D 2 Lot Traceability 6 G and Date code 2 5 1.60 mm 1.60 mm S 2 4 D D 1 2 P-Channel MOSFET P-Channel MOSFET Ordering Information: SiB911DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS T = 25 C - 2.6 C T = 70 C - 2.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A - 1.5 a, b T = 70 C A A - 1.2 Pulsed Drain Current I - 5 DM T = 25 C - 2.6 C I Continuous Source-Drain Diode Current S a, b T = 25 C A - 0.9 T = 25 C 3.1 C T = 70 C 2 C P Maximum Power Dissipation W D a, b T = 25 C A 1.1 a, b T = 70 C A 0.7 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, e t 5 s R 90 115 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 32 40 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 5 s. c. See Solder Profile (New Product SiB911DK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 19 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 1.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 4.5 V 5A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 1.5 A 0.242 0.295 GS D a R V = - 2.5 V, I = - 1.2 A 0.345 0.420 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 0.18 A 0.455 0.560 GS D a g V = - 10 V, I = - 1.5 A 3S Forward Transconductance fs DS D b Dynamic Input Capacitance C 115 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 30 pF oss DS GS C Reverse Transfer Capacitance 20 rss V = - 10 V, V = - 8 V, I = - 1.7 A 2.6 4.0 DS GS D Q Total Gate Charge g 1.6 2.5 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 1.7 A 0.3 gs DS GS D Q Gate-Drain Charge 0.5 gd R Gate Resistance f = 1 MHz 7 g t Turn-On Delay Time 12 20 d(on) t Rise Time V = - 10 V, R = 7.1 45 70 r DD L I - 1.4 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 10 15 D GEN g d(off) t Fall Time 31 50 f ns Turn-On Delay Time t 310 d(on) t Rise Time V = - 10 V, R = 7.1 25 40 r DD L I - 1.4 A, V = - 8 V, R = 1 Turn-Off Delay Time t 10 15 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 2.6 S C A I Pulse Diode Forward Current 5 SM V I = - 1.4 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Q Body Diode Reverse Recovery Charge 26 50 nC rr I = - 1.4 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74475 2 S-80515-Rev. B, 10-Mar-08