New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.216 at V = 4.5 V 1.5 GS New Thermally Enhanced PowerPAK RoHS 20 0.268 at V = 2.5 V 1.5 1.2 nC SC-75 Package COMPLIANT GS - Small Footprint Area 0.375 at V = 1.8 V 1.0 GS - Low On-Resistance APPLICATIONS Load Switch, PA Switch and Battery Switch for Portable PowerPAK SC75-6L-Dual Devices DC/DC Converter D D 1 2 1 S 1 2 Marking Code G 1 3 D 1 D 2 C A X Part code D 1 G G 1 2 D X X X 2 6 Lot Traceability G 2 5 and Date code 1.60 mm 1.60 mm S 2 4 S S 1 2 Ordering Information: SiB912DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C C 1.5 a T = 70 C 1.5 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A 1.5 b, c A T = 70 C A 1.4 Pulsed Drain Current I 5 DM a T = 25 C C 1.5 I Continuous Source-Drain Diode Current S b, c T = 25 C 0.9 A T = 25 C 3.1 C T = 70 C 2.0 C P Maximum Power Dissipation W D b, c T = 25 C 1.1 A b, c T = 70 C A 0.7 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 90 115 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 32 40 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiB912DK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 22 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 5A On-State Drain Current D(on) DS GS V = 4.5 V, I = 1.8 A 0.180 0.216 GS D a R V = 2.5 V, I = 1.6 A 0.223 0.268 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 0.3 A 0.300 0.375 GS D a g V = 10 V, I = 1.8 A 3S Forward Transconductance fs DS D b Dynamic Input Capacitance C 95 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 24 pF oss DS GS C Reverse Transfer Capacitance 11 rss V = 10 V, V = 8 V, I = 1.8 A 2.0 3.0 DS GS D Q Total Gate Charge g 1.2 1.8 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 1.8 A 0.3 gs DS GS D Q Gate-Drain Charge 0.15 gd R Gate Resistance f = 1 MHz 0.5 2.5 5.0 g t Turn-On Delay Time 510 d(on) Rise Time t 10 20 V = 10 V, R = 7.1 r DD L I 1.4 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 24 36 d(off) Fall Time t 816 f ns t Turn-On Delay Time 24 d(on) Rise Time t 918 V = 10 V, R = 7.1 r DD L I 1.4 A, V = 8 V, R = 1 t Turn-Off Delay Time D GEN g 816 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C 1.5 S C A I Pulse Diode Forward Current 5 SM V I = 1.4 A, V = 0 V Body Diode Voltage 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t 918 ns rr Q Body Diode Reverse Recovery Charge 36 nC rr I = 1.4 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 6 a ns t Reverse Recovery Rise Time 3 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68883 2 S-82022-Rev. A, 01-Sep-08