X-On Electronics has gained recognition as a prominent supplier of SI7129DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7129DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7129DN-T1-GE3 Vishay

SI7129DN-T1-GE3 electronic component of Vishay
SI7129DN-T1-GE3 Vishay
SI7129DN-T1-GE3 MOSFETs
SI7129DN-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI7129DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
Datasheet: SI7129DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3087 ea
Line Total: USD 1.54 
Availability - 3084
Ship by Wed. 19 Mar to Mon. 24 Mar
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2910
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.4349

217
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 78
Multiples : 1
78 : USD 0.8308
92 : USD 0.7056
93 : USD 0.6986
131 : USD 0.4974

3084
Ship by Wed. 19 Mar to Mon. 24 Mar
MOQ : 5
Multiples : 5
5 : USD 0.3087
50 : USD 0.2413
150 : USD 0.1821
500 : USD 0.1361
3000 : USD 0.1238
6000 : USD 0.1164

14105
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ : 1
Multiples : 1
1 : USD 1.0775
10 : USD 0.7416
25 : USD 0.7404
100 : USD 0.5225
500 : USD 0.4675
1000 : USD 0.4224
3000 : USD 0.4081
6000 : USD 0.407

2910
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.4349

217
Ship by Wed. 12 Mar to Tue. 18 Mar
MOQ : 92
Multiples : 1
92 : USD 0.7056
93 : USD 0.6986
131 : USD 0.4974

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7129DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7129DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI7129DN-T1-GE3 with MOSFET -30V Vds 20V Vgs PowerPAK 1212-8 is a vertical power MOSFET manufactured by Vishay. It is rated for a maximum drain-to-source voltage of -30V and a drain-source voltage of 20V when gate-to-source voltage is applied. It is designed to minimize on-resistance to maximize efficiency in power conversion applications with a higher density power module option than the traditional TO-220 or D2PAK. The MOSFET comes in an 8-pin PowerPAK 1212-8 SMD package, which offers a low profile and a large thermal pad for improved power handling. For safety, the device also has an integrated parasitic diode to protect against higher than expected voltage edges.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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