Si7121DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ( )I (A) Q (Typ.) 100 % R and UIS Tested DS DS(on) D g g Material categorization: d 0.0180 at V = -10 V -16 GS -30 22 nC For definitions of compliance please see d 0.0305 at V = -4.5 V -16 GS www.vishay.com/doc 99912 PowerPAK 1212-8 APPLICATIONS Notebook Battery Charging S S 3.30 mm 3.30 mm Notebook Adapter Switch 1 S 2 S 3 G G 4 D 8 D 7 D 6 D 5 Bottom View D Ordering Information: P-Channel MOSFET Si7121DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V -30 DS V Gate-Source Voltage V 25 GS d T = 25 C -16 C d T = 70 C -16 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C -10.6 A a, b T = 70 C -8.6 A A I -50 Pulsed Drain Current DM d T = 25 C -16 C I Continuous Source-Drain Diode Current S a, b T = 25 C -3 A Avalanche Current I -20 AS L = 0.1 mH Single-Pulse Avalanche Energy E 20 mJ AS T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range -55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 26 33 thJA C/W R Maximum Junction-to-Case Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 81 C/W. d. Package limited. e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 69956 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-2051-Rev. D, 30-Sep-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7121DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -30 V DS GS D V Temperature Coefficient V /T -31 DS DS J I = -250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -1 -3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 25 V 100 nA GSS DS GS V = -30 V, V = 0 V -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -30 V, V = 0 V, T = 55 C -5 DS GS J a I V -10 V, V = -10 V -30 A On-State Drain Current D(on) DS GS V = -10 V, I = -10 A 0.0150 0.0180 GS D a R Drain-Source On-State Resistance DS(on) V = -4.5 V, I = -7 A 0.0255 0.0305 GS D a g V = -10 V, I = -10 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1960 iss C V = -15 V, V = 0 V, f = 1 MHz Output Capacitance 380 pF oss DS GS C Reverse Transfer Capacitance 325 rss V = -15 V, V = -10 V, I = -10 A 43 65 DS GS D Q Total Gate Charge g 22 33 nC Q V = -15 V, V = -4.5 V, I = -10 A Gate-Source Charge 6 gs DS GS D Q Gate-Drain Charge 11 gd R Gate Resistance f = 1 MHz 0.3 1.3 2.5 g t Turn-On Delay Time 11 22 d(on) t V = -15 V, R = 3 Rise Time 13 25 r DD L t I -5 A, V = -10 V, R = 1 Turn-Off DelayTime 32 50 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 44 70 d(on) t V = -15 V, R = 3 Rise Time 100 160 r DD L t I -5 A, V = -4.5 V, R = 1 Turn-Off DelayTime 28 50 d(off) D GEN g t Fall Time 15 30 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C -16 S C A Pulse Diode Forward Current I -50 SM Body Diode Voltage V I = -2 A, V = 0 V -0.75 -1.2 V SD S GS Body Diode Reverse Recovery Time t 28 45 ns rr Body Diode Reverse Recovery Charge Q 20 40 nC rr I = -2 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 13 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69956 For technical questions, contact: pmostechsupport vishay.com 2 S13-2051-Rev. D, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000