New Product Si7123DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.0106 at V = - 4.5 V - 16.0 GS TrenchFET Power MOSFET: 1.8 V Rated - 20 0.0136 at V = - 2.5 V - 14.1 Ultra Low On-Resistance for Increased GS Battery Life 0.0189 at V = - 1.8 V - 12.0 GS New PowerPAK Package - Low Thermal Resistance, R thJC - Low 1.07 mm Profile Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Load/Power Switching in Portable Devices S 3.30 mm 3.30 mm 1 S S 2 S 3 G 4 D G 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7123DN-T1-E3 (Lead (Pb)-free) Si7123DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 16.0 - 10.2 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 12.8 - 8.2 A A I Pulsed Drain Current - 40 DM a I - 3.2 - 1.3 Continuous Source Current (Diode Conduction) S T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.4 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 26 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 69655 www.vishay.com S10-0347-Rev. D, 15-Feb-10 1New Product Si7123DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 19 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 40 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 15 A 0.0086 0.0106 GS D a R V = - 2.5 V, I = - 11.2 A 0.0112 0.0136 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 5 A 0.0156 0.0189 GS D a g V = - 15 V, I = - 4 A 27 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3729 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 542 pF oss DS GS C Reverse Transfer Capacitance 475 rss V = - 10 V, V = - 4.5 V, I = - 15 A 57 90 DS GS D Q Total Gate Charge g 35.5 55 nC Q V = - 10 V, V = - 2.5 V, I = - 15 A Gate-Source Charge 4.5 gs DS GS D Q Gate-Drain Charge 16.1 gd R Gate Resistance f = 1 MHz 2.0 g t Turn-On Delay Time 25 50 d(on) t V = - 10 V, R = 0.77 Rise Time 88 150 r DD L ns t I - 13 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 82 150 d(off) D GEN g t Fall Time 28 45 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 25 S C A a I - 40 Pulse Diode Forward Current SM V I = - 13 A Body Diode Voltage - 0.76 - 1.2 V SD S t Body Diode Reverse Recovery Time 48 80 ns rr Q Body Diode Reverse Recovery Charge 45 80 nC rr I = - 13 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns t Reverse Recovery Rise Time 29 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69655 2 S10-0347-Rev. D, 15-Feb-10