New Product Si7114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, g V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0075 at V = 10 V 100 % R Tested 35 COMPLIANT GS g 30 10.2 nC 100 % UIS Tested 0.0098 at V = 4.5 V 35 GS APPLICATIONS PowerPAK 1212-8 Synchronous Rectification S 3.30 mm 3.30 mm D 1 S 2 S 3 G 4 D 8 D G 7 D 6 D 5 S Bottom View Ordering Information: N-Channel MOSFET Si7114ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS g T = 25 C 35 C g T = 70 C 35 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 18 A b, c T = 70 C 14.5 A Pulsed Drain Current I 60 DM Avalanche Current I 30 AS L = 0.1 mH Avalanche Energy E mJ 45 AS T = 25 C 32 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 3.2 A T = 25 C 39 C T = 70 C 25 C Maximum Power Dissipation P W D b, c T = 25 C 3.7 A b, c T = 70 C 2.4 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 26 34 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) R Steady State 2.4 3.2 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (Si7114ADN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 33 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 6 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J V = 10 V, I = 18 A 0.0062 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 16 A 0.0081 0.0098 GS D a Forward Transconductance g V = 15 V, I = 18 A 50 S fs DS D b Dynamic C Input Capacitance 1230 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 275 pF oss DS GS C Reverse Transfer Capacitance 105 rss V = 15 V, V = 10 V, I = 19 A 21 32 DS GS D Total Gate Charge Q g 10.2 20 nC Q Gate-Source Charge 3.9 gs V = 15 V, V = 4.5 V, I = 19 A DS GS D Gate-Drain Charge Q 3.2 gd R Gate Resistance f = 1 MHz 0.3 1.6 3.2 g Turn-On Delay Time t 20 30 d(on) t Rise Time V = 15 V, R = 1.5 14 21 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 11 20 d(on) t Rise Time V = 15 V, R = 1.5 816 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) t Fall Time 714 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 32 S C A Pulse Diode Forward Current I 60 SM V I = 10 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 24 36 ns rr Q Body Diode Reverse Recovery Charge 20 30 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68932 2 S-82616-Rev. B, 03-Nov-08