Si7115DN Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET e 0.295 at V = - 10 V - 8.9 GS - 150 23.2 nC Low Thermal Resistance PowerPAK e 0.315 at V = - 6 V - 8.6 GS Package with Small Size and Low 1 mm Profile 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS S Active Clamp in Intermediate DC/DC Power Supplies 3.30 mm 3.30 mm 1 S H-Bridge High Side Switch for Lighting Application 2 S 3 G 4 D S 8 D 7 D 6 D 5 G Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) Si7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 150 DS V Gate-Source Voltage V 20 GS T = 25 C - 8.9 C T = 70 C - 7.1 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 2.3 A a, b T = 70 C - 1.9 A A I - 15 Pulsed Drain Current DM T = 25 C - 13 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 3 A I 15 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.25 mJ AS T = 25 C 52 C T = 70 C 33 C Maximum Power Dissipation P W D a, b T = 25 C 3.7 A a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Based on T = 25 C. C Document Number: 73864 www.vishay.com S11-1908-Rev. C, 26-Sep-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7115DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 26 33 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 81 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 150 V DS GS D V Temperature Coefficient V /T - 165 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 6.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 8 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4 A 0.245 0.295 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 3 A 0.260 0.315 GS D a g V = - 15 V, I = 4 A 12 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1190 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 61 pF oss DS GS C Reverse Transfer Capacitance 42 rss V = - 75 V, V = - 10 V, I = - 3 A 27.5 42 DS GS D Q Total Gate Charge g 23.2 35 nC Q V = - 75 V, V = - 6 V, I = - 3 A Gate-Source Charge 5.4 gs DS GS D Q Gate-Drain Charge 8.4 gd R Gate Resistance f = 1 MHz 1.3 6.1 9.2 g t Turn-On Delay Time 20 30 d(on) t V = - 75 V, R = 25 Rise Time 95 145 r DD L t I - 3 A, V = - 6 V, R = 1 Turn-Off DelayTime D GEN g 38 60 d(off) t Fall Time 34 51 f ns t Turn-On Delay Time 11 18 d(on) t V = - 75 V, R = 25 Rise Time 28 42 r DD L t I - 3 A, V = - 10 V, R = 1 Turn-Off DelayTime D GEN g 52 78 d(off) t Fall Time 35 53 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 13 S C A a I - 15 Pulse Diode Forward Current SM V I = - 3 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 65 90 ns rr Q Body Diode Reverse Recovery Charge 180 270 nC rr I = - 4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 45 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73864 2 S11-1908-Rev. C, 26-Sep-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000