Si7120DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) DS DS(on) D New Low Thermal Resistance 0.019 V = 10 V 10 PowerPAK 1212-8 Package with GS RoHS 6060 COMPLIANT Low 1.07-mm Profile 0.028 V = 4.5 V 8.2 GS Available 100% R Tested g APPLICATIONS Primary Side Switch PowerPAK 1212-8 Synchronous Rectification D S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 Ordering Information: Si7120DN-T1 D Si7120DN-T1E3 (Lead (Pb)-Free) 5 S Bottom View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage V 60 DS VV Gate-Source Voltage V 20 GS T = 25 C 10 6.3 A aa Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II JJ DD T = 70 C 8.0 5.1 A AA Pulsed Drain Current I 40 DM a Continuous Source Current (Diode Conduction) I 3.2 1.3 S Single Avalanche Current I 22 AS L = 0L = 0.1 mH1 mH Single Avalanche Energy E 24 mJ AS T = 25 C 3.8 1.5 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 2.4 1.0 A Operating Junction and Storage Temperature Range T , T 55 to 150 J stg CC b,c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 26 33 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 65 81 C/WC/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes a. Surface Mounted on 1 x 1 FR4 Board. b. See Solder Profile (Si7120DN Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 3.5 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 60 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I 30 A V 5 V, V = 10 V D(on) DS GS 0.015 0.019 V = 10 V, I = 10 A GS D aa DDrainrain--SSourceource On On--State ResistanceState Resistance rr DSDS((on)on) V = 4.5 V, I = 8.2 A 0.023 0.028 GS D a Forward Transconductance g V = 15 V, I = 10 A 35 S fs DS D a Diode Forward Voltage V I = 3.2 A, V = 0 V 0.78 1.2 V SD S GS b Dynamic Total Gate Charge Q 30 45 g Gate-Source Charge Q V = 10 V, V = 10 V, I = 10 A 6.9 nC gs DS GS D Gate-Drain Charge Q 5.8 gd Gate Resistance R 0.65 1.3 1.95 g Turn-On Delay Time t 14 25 d(on) Rise Time t 12 20 r VV = 30 V = 30 V,, R R = 30 = 30 DDDD LL I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t D GEN g 50 80 ns d(off) Fall Time t 12 20 f Source-Drain Reverse Recovery Time t I = 3.2 A, di/dt = 100 A/ s 60 100 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 40.0 40.0 35.0 35.0 V = 10 thru 5 V GS 30.0 30.0 25.0 25.0 4 V 20.0 20.0 15.0 15.0 T = 125 C 10.0 10.0 C 5.0 5.0 25 C 55 C 3 V 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 5.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 72771 www.vishay.com S-51128Rev. D, 13-Jun-05 2 I Drain Current (A) D I Drain Current (A) D