X-On Electronics has gained recognition as a prominent supplier of SI7143DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7143DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7143DP-T1-GE3 Vishay

SI7143DP-T1-GE3 electronic component of Vishay
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Part No.SI7143DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs PowerPAK SO-8
Datasheet: SI7143DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.334 ea
Line Total: USD 1.33 
Availability - 40380
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40380
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.334
10 : USD 1.0327
100 : USD 0.7544
500 : USD 0.6406
1000 : USD 0.6014
3000 : USD 0.5819
6000 : USD 0.575
24000 : USD 0.56

   
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We are delighted to provide the SI7143DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7143DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7143DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 e,f V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.0100 at V = - 10 V - 35 GS - 30 24.6 nC Low Thermal Resistance PowerPAK 0.0186 at V = - 4.5V - 35 GS Package with Small Size and Low 1.07 mm Profile 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS Load Switch S S Adaptor Switch 6.15 mm 5.15 mm 1 S Notebook PC 2 S 3 G 4 G D 8 D 7 D 6 D 5 D Bottom View P-Channel MOSFET Ordering Information: Si7143DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS e T = 25 C - 35 C e T = 70 C - 35 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 16.1 A a, b T = 70 C - 12.9 A A I - 60 Pulsed Drain Current DM T = 25 C - 30 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 3.5 A I - 25 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 31.25 mJ AS T = 25 C 35.7 C T = 70 C 22.8 C Maximum Power Dissipation P W D a, b T = 25 C 4.2 A a, b T = 70 C 2.7 A , T Operating Junction and Storage Temperature Range T - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. f. Based on T = 25 C C Document Number: 65670 www.vishay.com S10-0112-Rev. A, 18-Jan-10 1New Product Si7143DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 25 30 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.9 3.5 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 70 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 20 DS DS J I = - 250 A mV/C D Temperature Coefficient V /T V 5 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.8 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 16.1 A 0.0083 0.0100 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = 11.8 A 0.0155 0.0186 GS D a g V = - 15 V, I = - 16.1 A 37 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2230 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 385 pF oss DS GS C Reverse Transfer Capacitance 322 rss V = - 15 V, V = - 10 V, I = - 14.4 A 47.5 71 DS GS D Q Total Gate Charge g 24.6 37 nC Q V = - 15 V, V = - 4.5 V, I = - 14.4 A Gate-Source Charge 7.7 gs DS GS D Q Gate-Drain Charge 12 gd R Gate Resistance f = 1 MHz 0.3 1.5 3.0 g t Turn-On Delay Time 50 75 d(on) t Rise Time V = - 15 V, R = 1.5 43 65 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 30 45 d(off) D GEN g t Fall Time 14 21 f ns t Turn-On Delay Time 14 21 d(on) t Rise Time V = - 15 V, R = 1.5 918 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 36 54 d(off) D GEN g t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current S C - 30 A a I - 60 Pulse Diode Forward Current SM Body Diode Voltage V I = - 10 A - 0.8 - 1.2 V SD F Body Diode Reverse Recovery Time t 31 47 ns rr Body Diode Reverse Recovery Charge Q 30 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 15 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65670 2 S10-0112-Rev. A, 18-Jan-10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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