X-On Electronics has gained recognition as a prominent supplier of SI7148DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7148DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7148DP-T1-GE3 Vishay

SI7148DP-T1-GE3 electronic component of Vishay
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Part No.SI7148DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 75V 28A 96W 11mohm 10V
Datasheet: SI7148DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.3238 ea
Line Total: USD 3971.4 
Availability - 2910
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.3238
6000 : USD 1.3105

1
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.3295

3
Ship by Tue. 26 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.7572
10 : USD 3.2802
30 : USD 2.9978
100 : USD 2.7096
500 : USD 2.5781
1000 : USD 2.5188

2855
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 20
Multiples : 1
20 : USD 2.1125
100 : USD 2.0962

2910
Ship by Tue. 19 Nov to Mon. 25 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.3238
6000 : USD 1.3105

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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We are delighted to provide the SI7148DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7148DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7148DP Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.011 at V = 10 V 28 GS TrenchFET Power MOSFET 75 33 nC 0.0145 at V = 4.5 V 28 GS 100 % R Tested g APPLICATIONS PowerPAK SO-8 Primary Side Switch S 6.15 mm 5.15 mm 1 S D 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 75 DS V V Gate-Source Voltage 20 GS T = 25 C 28 C T = 70 C 22 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 28 b, c T = 70 C A 12 A I Pulsed Drain Current 60 DM T = 25 C 28 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.3 I Avalanche Current 45 AS L = 0.1 mH E Single-Pulse Avalanche Energy 100 mJ AS T = 25 C 96 C T = 70 C 61 C Maximum Power Dissipation P W D b, c T = 25 C A 5.4 b, c T = 70 C A 3.4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73314 www.vishay.com S09-0273-Rev. B, 16-Feb-09 1Si7148DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b R t 10 s 18 23 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.0 1.3 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 65 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 75 V DS GS D V Temperature Coefficient V /T 75 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V = V , I = 250 A 1.5 2.0 2.5 DS GS D Gate-Source Threshold Voltage V V GS(th) V = V , I = 5 mA 2.3 DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 75 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 75 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0091 0.011 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 13.5 A 0.012 0.0145 GS D a g V = 15 V, I = 15 A 60 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 2900 iss C V = 35 V, V = 0 V, f = 1 MHz Output Capacitance 370 pF oss DS GS Reverse Transfer Capacitance C 196 rss V = 38 V, V = 10 V, I = 15 A 68 100 DS GS D Q Total Gate Charge g 33 50 nC Gate-Source Charge Q V = 38 V, V = 4.5 V, I = 15 A 9.5 gs DS GS D Q Gate-Drain Charge 16.8 gd R Gate Resistance f = 1 MHz 0.5 1.1 1.7 g t Turn-On Delay Time 33 50 d(on) t Rise Time V = 38 V, R = 3.8 255 390 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 35 55 d(off) t Fall Time 100 150 f ns t Turn-On Delay Time 17 26 d(on) t Rise Time V = 38 V, R = 3.8 46 70 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 39 60 d(off) t Fall Time 18 30 f www.vishay.com Document Number: 73314 2 S09-0273-Rev. B, 16-Feb-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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