6.15 mm Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET g V (V) R ()I (A) Q (TYP.) DS DS(on) D g Low thermal resistance PowerPAK package 0.070 at V = 10 V 25 GS 200 34 100 % R and UIS tested g 0.076 at V = 6 V 24 GS Material categorization: PowerPAK SO-8 Single For definitions of compliance please see D www.vishay.com/doc 99912 D 8 D 7 D 6 APPLICATIONS D 5 Primary side switch Industrial 1 G 2 S 3 S 4 S 1 G S Top View Bottom View N-Channel MOSFET Ordering Information: Si7172DP-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 25 C T = 70 C 20 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.9 A b, c T = 70 C 4.8 A A Pulsed Drain Current I 30 DM a T = 25 C 30 C Continuous Source-Drain Diode Current I S b, c T = 25 C 4.5 A Avalanche Current I 15 AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 96 C T = 70 C 61.5 C Maximum Power Dissipation P W D b, c T = 25 C 5.4 A b, c T = 70 C 3.5 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, f Maximum Junction-to-Ambient t 10 s R 18 23 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 11.5 thJC Notes a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (Si7172DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 1 mA 200 - - V DS GS D V Temperature Coefficient V /T - 207 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --9.1- GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 200 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 - - A D(on) DS GS V = 10 V, I = 5.9 A - 0.058 0.070 GS D a Drain-Source On-State Resistance R DS(on) V = 6 V, I = 5.7 A - 0.063 0.076 GS D a Forward Transconductance g V = 15 V, I = 5.9 A - 19 - S fs DS D b Dynamic Input Capacitance C - 2250 - iss Output Capacitance C V = 100 V, V = 0 V, f = 1 MHz - 115 - pF oss DS GS Reverse Transfer Capacitance C -61- rss V = 100 V, V = 10 V, I = 5.9 A - 51 77 DS GS D Total Gate Charge Q g -34 51 nC Gate-Source Charge Q V = 100 V, V = 6 V, I = 5.9 A -14 - gs DS GS D Gate-Drain Charge Q -15.5- gd Gate Resistance R f = 1 MHz - 1 2 g Turn-On Delay Time t -22 33 d(on) Rise Time t -12 18 r V = 100 V, R = 20.8 DD L I 4.8 A, V = 6 V, R = 1 Turn-Off Delay Time t -2D GEN g 436 d(off) Fall Time t -10 20 f ns Turn-On Delay Time t -15 23 d(on) Rise Time t -11 20 r V = 100 V, R = 20.8 DD L I 4.8 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g 639 d(off) Fall Time t -9 18 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 30 S C A a Pulse Diode Forward Current I -- 30 SM Body Diode Voltage V I = 4.8 A - 0.8 1.2 V SD S Body Diode Reverse Recovery Time t - 80 120 ns rr Body Diode Reverse Recovery Charge Q - 275 413 nC rr I = 4.8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -60 - a ns Reverse Recovery Rise Time t -20 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0996-Rev. B, 05-May-14 Document Number: 68763 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000