New Product Si7164DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 60 0.00625 at V = 10 V 49.5 nC 100 % R Tested GS 60 COMPLIANT g 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Primary Side Switch POL S 6.15 mm 5.15 mm D 1 S Intermediate Bus Converter 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: Si7164DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS g T = 25 C C 60 g T = 70 C C 60 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 23.5 b, c T = 70 C A 18.8 A I Pulsed Drain Current 80 DM g T = 25 C C 60 Continuous Source-Drain Diode Current I S b, c T = 25 C A 5.2 I Single Pulse Avalanche Current 50 AS L = 0.1 mH E Single Pulse Avalanche Energy 125 mJ AS T = 25 C 104 C T = 70 C 66.5 C P Maximum Power Dissipation W D b, c T = 25 C A 6.25 b, c T = 70 C A 4.0 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 15 20 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 0.9 1.2 thJC Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7164DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 V DS GS D V Temperature Coefficient V /T 66 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 10 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 2.5 4.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 55 C 10 DS GS J a I V 10 V, V = 10 V 40 A On-State Drain Current D(on) DS GS a R V = 10 V, I = 10 A 0.005 0.00625 Drain-Source On-State Resistance DS(on) GS D a g V = 15 V, I = 10 A 30 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2830 iss C V = 30 V, V = 0 V, f = 1 MHz Output Capacitance 425 pF oss DS GS C Reverse Transfer Capacitance 150 rss Q Total Gate Charge 49.5 75 g Q V = 30 V, V = 10 V, I = 10 A Gate-Source Charge 15.1 nC gs DS GS D Gate-Drain Charge Q 12.2 gd R Gate Resistance f = 1 MHz 0.4 1.2 2.4 g Turn-On Delay Time t 21 40 d(on) t Rise Time V = 30 V, R = 3 816 r DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t 30 55 D GEN g d(off) t Fall Time 918 f ns Turn-On Delay Time t 23 45 d(on) t Rise Time V = 30 V, R = 3 11 22 r DD L I 10 A, V = 8 V, R = 6 t Turn-Off Delay Time D GEN g 40 70 d(off) t Fall Time 11 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A a I 80 Pulse Diode Forward Current SM V I = 4 A Body Diode Voltage 0.75 1.2 V SD S Body Diode Reverse Recovery Time t 41 80 ns rr Q Body Diode Reverse Recovery Charge 64 130 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 27 a ns t Reverse Recovery Rise Time 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68738 2 S-81581-Rev. A, 07-Jul-08