New Product Si7145DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition d 0.0026 at V = - 10 V - 60 TrenchFET Power MOSFET GS - 30 129 nC 100 % R Tested d g 0.00375 at V = - 4.5 V - 60 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 S APPLICATIONS S 6.15 mm 5.15 mm Adaptor Switch 1 S 2 - Notebook Computers S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS d T = 25 C - 60 C d T = 70 C - 60 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 36.5 A a, b T = 70 C - 29.2 A A I - 100 Pulsed Drain Current DM d T = 25 C - 60 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 5.6 A I Avalanche Current - 50 AS L = 0.1 mH E Single-Pulse Avalanche Energy 125 mJ AS T = 25 C 104 C T = 70 C 66.6 C P Maximum Power Dissipation W D a, b T = 25 C 6.25 A a, b T = 70 C 4.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 15 20 thJA C/W R Maximum Junction-to-Case Steady State 0.9 1.2 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 54 C/W. d. Package limited. e. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64814 www.vishay.com S09-0872-Rev. A, 18-May-09 1New Product Si7145DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 18 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 25 A 0.0021 0.0026 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 20 A 0.0030 0.00375 GS D a g V = - 10 V, I = - 25 A 110 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 15 660 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 1335 pF oss DS GS C Reverse Transfer Capacitance 1570 rss V = - 15 V, V = - 10 V, I = - 20 A 275 413 DS GS D Q Total Gate Charge g 129 194 nC Q V = - 15 V, V = - 4.5 V, I = - 20 A Gate-Source Charge 37 gs DS GS D Q Gate-Drain Charge 40 gd R Gate Resistance f = 1 MHz 0.4 1.6 3.2 g t Turn-On Delay Time 27 50 d(on) t V = - 15 V, R = 1.5 Rise Time 13 26 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 130 220 d(off) D GEN g t Fall Time 27 50 f ns t Turn-On Delay Time 125 210 d(on) t V = - 15 V, R = 1.5 Rise Time 110 190 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 107 180 d(off) D GEN g t Fall Time 43 80 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 60 S C A Pulse Diode Forward Current I - 100 SM Body Diode Voltage V I = - 5 A, V = 0 V - 0.69 - 1.1 V SD S GS Body Diode Reverse Recovery Time t 42 80 ns rr Body Diode Reverse Recovery Charge Q 44 84 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 20 a ns Reverse Recovery Rise Time t 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64814 2 S09-0872-Rev. A, 18-May-09